www.DataSheet4U.com
ISSUED DATE :2004/02/18 REVISED DATE :2006/10/30F
G2N7000
Description
N-CHANNEL ENHANCEMENT MODE M...
www.DataSheet4U.com
ISSUED DATE :2004/02/18 REVISED DATE :2006/10/30F
G2N7000
Description
N-CHANNEL ENHANCEMENT MODE MOSFET
The G2N7000 is designed for high voltage, high speed applications such as switching
regulators, converters, solenoid and relay drivers.
Package Dimensions
D
E S1
TO-92
A
S E A T IN G PLANE
b1
REF.
L
e1
e
b
C
A S1 b b1 C
Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51
REF. D E L e1 e
Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66
Absolute Maximum Ratings at Ta = 25
Parameter Operating Junction and Storage Temperature Range Drain-Source Voltage Gate-Source Voltage -Continuous -Non-repetitive (tp 50us) Drain Current -Continuous - Pulsed Power Dissipation Ta=25 Derate above 25 Symbol Ratings -55 ~ +150 60 ±20 ±40 200 500 0.35 2.8 357 300 V V V mA W mW/ /W Unit
Tj, Tstg VDSS VGS VGSM ID IDM PD R
JA
Thermal Resistance ,Junction-to-Ambient Maximum Lead Temperature for Soldering Purposes,1/16” from case for 10 seconds
TL
Electrical Characteristics (Tc= 25
Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Static Drain-Source on-State Resistance Drain-Source on-Voltage Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol
unless otherwise noted) Min. 60 0.8 75 100 Typ. Max. 3.0 ±100 1 5.0 6.0 2.5 0.45 60 25 5 pF V mS Unit V V nA uA mA Test Conditions
V(BR)DSS VGS(th...