N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Pb Free Plating Product
ISSUED DATE :2005/04/21 REVISED DATE :
G2U09N70
N-CHANNEL ENHANCEMENT MODE...
Description
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/04/21 REVISED DATE :
G2U09N70
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS 600/650/700V RDS(ON) 0.75 ID 9A
The G2U09N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. TO-262 type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching, ruggedized design and cost-effectiveness. The TO-262 package is universally preferred for all commercial-industrial applications. The device is suited for switch mode power supplies, DC-AC converters and high current high speed switching circuits. *Dynamic dv/dt Rating *Simple Drive Requirement *Repetitive Avalanche Rated *Fast Switching Speed
Description
Features
Package Dimensions
REF. A b c D E
Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4
REF. c2 b2 L e L2
Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 1.27 REF.
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS@10V Continuous Drain Current , VGS@10V Pulsed Drain Current
1
Symbol - /A/H VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25
2
Ratings 600/650/700 20 9 5 40 156 1.25 305 9 9 -55 ~ +150
Unit V V A A A W W/ mJ A mJ
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Operating Junction and Storage T...
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