G2U4407 Datasheet: P-CHANNEL ENHANCEMENT MODE POWER MOSFET





G2U4407 P-CHANNEL ENHANCEMENT MODE POWER MOSFET Datasheet

Part Number G2U4407
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Manufacture GTM
Total Page 4 Pages
PDF Download Download G2U4407 Datasheet PDF

Features: www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2005/07/05 REVISED DA TE : G2U4407 P-CHANNEL ENHANCEMENT MOD E POWER MOSFET BVDSS RDS(ON) ID -30V 14m -50A The G2U4407 provide the desig ner with the best combination of fast s witching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-262 package is universally prefe rred for all commercial-industrial appl ications and suited for low voltage app lications such as DC/DC converters. *Si mple Drive Requirement *Lower On-resist ance *Fast Switching Characteristic De scription Features Package Dimensions REF. A b c D E Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 REF. c2 b2 L e L2 Millimet er Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 1.27 REF. Absolute Max imum Ratings Parameter Drain-Source Vol tage Gate-Source Voltage Continuous Dra in Current, VGS@10V Continuous Drain Cu rrent, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Tj, Tstg Rat.

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www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/07/05
REVISED DATE :
G2U4407
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
-30V
14m
-50A
Description
The G2U4407 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-262 package is universally preferred for all commercial-industrial applications and suited for low
voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching Characteristic
Package Dimensions
REF.
A
b
c
D
E
Millimeter
Min. Max.
4.40 4.80
0.76 1.00
0.36 0.50
8.60 9.00
9.80 10.4
REF.
c2
b2
L
e
L2
Millimeter
Min. Max.
1.25 1.45
1.17 1.47
13.25 14.25
2.54 REF.
1.27 REF.
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
Total Power Dissipation
VDS
VGS
ID @TC=25
ID @TC=100
IDM
PD @TC=25
Linear Derating Factor
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
-30
25
-50
-32
-180
54
0.4
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-case
Rthj-amb
Value
2.3
62
Unit
/W
/W
G2U4407
Page: 1/4

           






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