G421SD

www.DataSheet4U.com G421SD Description Package Dimensions 1/2 S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O LT A G E 4 0 V, C U R R E N T 0 . 1 A The G421SD is designed for low power rectification. REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Peak Forward Surge Current at 8.3mSec single half sine-wave Typical Junction Capacitance between Terminal Maximum Average Forward Rectified Current Total Power Dissipation Symbol Tj Tstg VRRM VRPS VDC IFSM CJ Io PD Ratings +125 -40 ~ +125 40 28 40 1.0 6.0 0.1 225 V V V A pF A mW Unit Characteristics at Ta = 25 Symbol VF(1) VF(2) IR Typ. 0.55 0.34 30 Unit V V uA Test Condition IF(1) = 100mA IF(2) = 10mA VR = 10V Characteristics Maximum Instantaneous Forward Voltage Maximum Instantaneous Forward Voltage Maximum Average Reverse Current 2/2 Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for ...