MHPA18010N

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MHPA18010N Rev. 4, 5/2006 CDMA Band RF Linear LDMOS Amplifier Designed for Class AB amplifier applications in 50 ohm systems operating in the 1800 to 1900 MHz frequency band. A silicon FET design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital CDMA and GSM modulation systems. Typical CDMA Performance: 1840 MHz, 28 Volts IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Adjacent Channel Power: - 51 dBc @ 30 dBm Average Power, 885 kHz Channel Spacing Power Gain: 24.5 dB Min (@ f = 1840 MHz) Features Excellent Phase Linearity and Group Delay Characteristics Ideal for Feedforward Base Station Applications N Suffix Indicates Lead - Free Terminations MHPA18010N 1805- 1880 MHz 10 W, 24.5 dB RF HIGH POWER LDMOS AMPLIFIER CASE 301AP - 02, STYLE 3 Table 1. Maximum Ratings (TC = 25°C unless otherwise noted) Rating DC Supply Voltage RF Input Power (Single Carrier CW) Storage Temperature Range Operating Case Temperature Range Symbol VDD Pin Tstg TC Value 30 +20 - 40 to +100 - 20 to +100 Unit Vdc dBm °C °C Table 2. Electrical Characteristics (VDD = 28 Vdc, VBIAS ≅ 8 V Set for Supply Current of 600 mA, TC = 25°C, 50 Ω System) Characteristic Supply Current Power Gain Gain Flatness Power Output @ 1 dB Comp. Input VSWR Noise Figure (f = 1840 MHz) (f = 1805 - 1880 MHz) (f = 1840 MHz) (f = 1805 - 1880 ...