MHVIC915NR2

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MHVIC915NR2 Rev. 9, 5/2006 RF LDMOS Wideband Integrated Power Amplifier The MHVIC915NR2 wideband integrated circuit is designed with on - chip matching that makes it usable from 750 to 1000 MHz. This multi - stage structure is rated for 26 to 28 Volt operation and covers all typical cellular base station modulation formats. Final Application Typical Single - Carrier N - CDMA Performance: VDD = 27 Volts, IDQ1 = 80 mA, IDQ2 = 120 mA, Pout = 34 dBm, Full Frequency Band (746 to 960 MHz), IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Power Gain — 31 dB Power Added Efficiency — 21% ACPR @ 750 kHz Offset — - 50 dBc in 30 kHz Bandwidth Driver Applications Typical Single - Carrier N - CDMA Performance: VDD = 27 Volts, IDQ1 = 80 mA, IDQ2 = 120 mA, Pout = 23 dBm, Full Frequency Band (869 894 MHz), IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13), Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 31 dB Power Added Efficiency — 21% ACPR @ 750 kHz Offset — - 60 dBc in 30 kHz Bandwidth ACPR @ 1.98 MHz Offset — - 66 dBc in 30 kHz Bandwidth Typical GSM Performance: VDD = 26 Volts, Pout = 15 W P1dB, Full Frequency Band (921 - 960 MHz) Power Gain — 30 dB @ P1dB Power Added Efficiency = 56% @ P1dB Capable of Handling 3:1 VSWR, @ 27 Vdc, 880 MHz, 15 Watts CW Output Power Characterized with Series Equivalent Large - Signal Impedance Parameters...