(STK12N05L / STK12N06L) N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
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STK12N05L STK12N06L
N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
TYPE STK12N05L ...
www.DataSheet4U.com
STK12N05L STK12N06L
N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS
TRANSISTOR
TYPE STK12N05L STK12N06L
s s s s s s s
V DSS 50 V 60 V
R DS( on) < 0.15 Ω < 0.15 Ω
ID 12 A 12 A
s
TYPICAL RDS(on) = 0.115 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE LOGIC LEVEL COMPATIBLE INPUT 175oC OPERATING TEMPERATURE FOR STANDARD PACKAGE APPLICATION ORIENTED CHARACTERIZATION
1
2
3
1
2
3
SOT-82
SOT-194 (option)
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s
REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)
s
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter STK12N05L VD S V DG R V GS ID ID ID M( ) P tot T stg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature
o o o
Value STK12N06L 60 60 ± 15 12 8 48 50 0.33 -65 to 175 175
Unit
50 50
V V V A A A W W/o C
o o
C C
() Pulse width limited by safe operating area
November 1996
1/10
STK12N05L/STK12N06L
THERMAL DATA
R thj-cas e Rthj- amb Rthj- amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead...