STP3NK90Z

STP3NK90Z Datasheet N-channel 900 V, 3.6 Ω typ., 3 A SuperMESH Power MOSFET in a TO-220 package Features TAB TO-220 1 23 Order code VDS RDS(on) max. ID STP3NK90Z 900 V 4.8 Ω 3A 100% avalanche tested Gate charge minimized Very low intrinsic capacitance Zener-protected D(2, TAB) Applications Switching applications G(1) Description This high-voltage device is a Zener-protected N-channel Power MOSFET developed S(3) using the SuperMESH technology by STMicroelectronics, an optimization of the well- AM01476v1_tab established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Product status link STP3NK90Z Product summary Order code STP3NK90Z Marking P3NK90Z Package TO-220 Packing Tube DS14416 - Rev 1 - August 2023 For further information contact your local STMicroelectronics sales office. www.st.com STP3NK90Z Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C ESD Gate-source, human body model (R = 1.5 kΩ, C = 100 pF) dv/dt(2) Peak diode recovery voltage slope Tstg Storage temperature range TJ Operating junction temperature range 1. Pulse width limited by ...