DatasheetsPDF.com

LNA2601L Dataheets PDF



Part Number LNA2601L
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description GaAs Infrared Light Emitting Diode
Datasheet LNA2601L DatasheetLNA2601L Datasheet (PDF)

Infrared Light Emitting Diodes LNA2601L GaAs Infrared Light Emitting Diode Unit : mm 3.5±0.3 2.4 1.1 0.8 max. 1.1 0.8 For optical control systems Features High-power output, high-efficiency Emitted light spectrum suited for silicon photodetectors Ultra-miniature, thin side-view type package Infrared light emission close to monochromatic light : λP = 950 nm 3.0±0.3 ø1.1 R0.5 1.95±0.25 1.4±0.2 0.9 0.5 12 min. Not Soldered 2.15 max. 2-0.5±0.15 0.3±0.15 2 2.54 1 Absolute Maximum Ratings .

  LNA2601L   LNA2601L



Document
Infrared Light Emitting Diodes LNA2601L GaAs Infrared Light Emitting Diode Unit : mm 3.5±0.3 2.4 1.1 0.8 max. 1.1 0.8 For optical control systems Features High-power output, high-efficiency Emitted light spectrum suited for silicon photodetectors Ultra-miniature, thin side-view type package Infrared light emission close to monochromatic light : λP = 950 nm 3.0±0.3 ø1.1 R0.5 1.95±0.25 1.4±0.2 0.9 0.5 12 min. Not Soldered 2.15 max. 2-0.5±0.15 0.3±0.15 2 2.54 1 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP* VR Topr Tstg Ratings 75 50 1 3 –25 to +85 – 40 to +100 Unit mW mA A V ˚C ˚C 1: Anode 2: Cathode f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins Half-power angle Symbol PO λP ∆λ VF IR Ct θ Conditions IF = 50mA IF = 50mA IF = 50mA IF = 50mA VR = 3V VR = 0V, f = 1MHz The angle in which radiant intencity is 50% min 1.5 typ 950 50 max Unit mW nm nm 1.5 10 35 20 V µA pF deg. 1 Infrared Light Emitting Diodes LNA2601L IF — Ta 60 10 2 IFP — Duty cycle tw = 10µs Ta = 25˚C 80 70 IF — VF Ta = 25˚C IF (mA) IFP (A) 50 IF (mA) Forward current 1 10 10 2 10 60 50 40 30 20 10 Allowable forward current 40 Pulse forward current 30 1 20 10 –1 10 0 – 25 0 20 40 60 80 100 10 –2 10 –1 0 0 0.4 0.8 1.2 1.6 Ambient temperature Ta (˚C ) Duty cycle (%) Forward voltage VF (V) ∆PO — IFP 10 2 (1) tw = 10µs f = 100Hz (2) DC Ta = 25˚C 1.6 VF — Ta 10 3 ∆PO — Ta IF = 20mA ∆PO VF (V) 10 (1) 1.2 10mA 1mA Relative radiant power 1 (2) 0.8 Relative radiant power 120 Forward voltage ∆PO 10 2 10 – 25 IF = 50mA 10 –1 0.4 10 –2 1 10 10 2 10 3 0 – 40 0 40 80 0 20 40 60 80 100 Pulse forward current IFP (mA) Ambient temperature Ta (˚C ) Ambient temperature Ta (˚C ) λP — Ta 1000 IF = 20mA 100 Spectral characteristics IF = 50mA Ta = 25˚C Directivity characteristics 0˚ 100 90 10˚ 20˚ Relative radiant intensity (%) 980 80 80 70 Relative radiant intensity (%) λP (nm) 30˚ Peak emission wavelength 960 60 60 50 40 40˚ 50˚ 60˚ 70˚ 80˚ 90˚ 940 40 30 20 20 920 900 – 40 0 40 80 120 0 860 900 940 980 1020 1060 1100 Ambient temperature Ta (˚C ) Wavelength λ (nm) 2 .


LN963185UNA-B4 LNA2601L LNA2603F


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)