Document
Infrared Light Emitting Diodes
LNA2601L
GaAs Infrared Light Emitting Diode
Unit : mm
3.5±0.3 2.4 1.1 0.8 max. 1.1 0.8
For optical control systems Features
High-power output, high-efficiency Emitted light spectrum suited for silicon photodetectors Ultra-miniature, thin side-view type package Infrared light emission close to monochromatic light : λP = 950 nm
3.0±0.3
ø1.1 R0.5
1.95±0.25 1.4±0.2 0.9 0.5
12 min. Not Soldered 2.15 max.
2-0.5±0.15
0.3±0.15
2
2.54
1
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature
*
Symbol PD IF IFP* VR Topr Tstg
Ratings 75 50 1 3 –25 to +85 – 40 to +100
Unit mW mA A V ˚C ˚C
1: Anode 2: Cathode
f = 100 Hz, Duty cycle = 0.1 %
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins Half-power angle Symbol PO λP ∆λ VF IR Ct θ Conditions IF = 50mA IF = 50mA IF = 50mA IF = 50mA VR = 3V VR = 0V, f = 1MHz
The angle in which radiant intencity is 50%
min 1.5
typ 950 50
max
Unit mW nm nm
1.5 10 35 20
V µA pF deg.
1
Infrared Light Emitting Diodes
LNA2601L
IF — Ta
60 10 2
IFP — Duty cycle
tw = 10µs Ta = 25˚C 80 70
IF — VF
Ta = 25˚C
IF (mA)
IFP (A)
50
IF (mA) Forward current
1 10 10 2
10
60 50 40 30 20 10
Allowable forward current
40
Pulse forward current
30
1
20
10 –1
10
0 – 25
0
20
40
60
80
100
10 –2 10 –1
0
0
0.4
0.8
1.2
1.6
Ambient temperature Ta (˚C )
Duty cycle (%)
Forward voltage VF (V)
∆PO — IFP
10 2 (1) tw = 10µs f = 100Hz (2) DC Ta = 25˚C 1.6
VF — Ta
10 3
∆PO — Ta
IF = 20mA
∆PO
VF (V)
10
(1)
1.2 10mA 1mA
Relative radiant power
1
(2)
0.8
Relative radiant power
120
Forward voltage
∆PO
10 2 10 – 25
IF = 50mA
10 –1
0.4
10 –2
1
10
10 2
10 3
0 – 40
0
40
80
0
20
40
60
80
100
Pulse forward current IFP (mA)
Ambient temperature Ta (˚C )
Ambient temperature Ta (˚C )
λP — Ta
1000 IF = 20mA 100
Spectral characteristics
IF = 50mA Ta = 25˚C
Directivity characteristics
0˚ 100 90 10˚ 20˚
Relative radiant intensity (%)
980
80
80 70
Relative radiant intensity (%)
λP (nm)
30˚
Peak emission wavelength
960
60
60 50 40
40˚ 50˚ 60˚ 70˚ 80˚ 90˚
940
40 30 20 20
920
900 – 40
0
40
80
120
0 860
900
940
980
1020 1060 1100
Ambient temperature Ta (˚C )
Wavelength λ (nm)
2
.