U630H16XS

Obsolete - Not Recommended for New Designs www.DataSheet4U.com U630H16XS HardStore 2K x 8 nvSRAM Die Features Description The U630H16 has two separate modes of operation: SRAM mode and non-volatile mode, determined by the state of the NE pad. In SRAM mode, the memory operates as an ordinary static RAM. In non-volatile operation, data is transferred in parallel from SRAM to EEPROM or from EEPROM to SRAM. In this mode SRAM functions are disabled. The U630H16 is a fast static RAM (25, 35, 45 ns), with a non-volatile electrically erasable PROM (EEPROM) element incorporated in each static memory cell. The SRAM can be read and written an unlimited number of times, while independent non-volatile data resides in EEPROM. Data transfers from the SRAM to the EEPROM (the STORE operation), or from the EEPROM to the SRAM (the RECALL operation) are initiated through the state of the NE pad. The U630H16 combines the high performance and ease of use of a fast SRAM with non-volatile data integrity. Once a STORE cycle is initiated, further input or output are disabled until the cycle is completed. Internally, RECALL is a two step procedure. First, the SRAM data is cleared and second, the non-volatile information is transferred into the SRAM cells. The RECALL operation in no way alters the data in the EEPROM cells. The non-volatile data can be recalled an unlimited number of times. The chips are tested with a restricted wafer probe program at room temperature only. Untested parameters are mark...