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G2314 Dataheets PDF



Part Number G2314
Manufacturers GTM
Logo GTM
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet G2314 DatasheetG2314 Datasheet (PDF)

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/05/16 REVISED DATE : G2314 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 75m 3.5A The G2314 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The G2314 is universally used for all commercial-industrial applications. Description *Capable of 2.5V gate drive *Low on-resistance Features Package Dimensions REF. A B C D E F Milli.

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www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/05/16 REVISED DATE : G2314 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 75m 3.5A The G2314 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The G2314 is universally used for all commercial-industrial applications. Description *Capable of 2.5V gate drive *Low on-resistance Features Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, [email protected] Continuous Drain Current3, [email protected] Pulsed Drain Current1,2 Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a Ratings 20 12 3.5 2.8 10 1.38 0.01 -55 ~ +150 Ratings 90 Unit V V A A A W W/ Thermal Data Parameter 3 Thermal Resistance Junction-ambient Max. Unit /W 1/4 ISSUED DATE :2005/05/16 REVISED DATE : Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Unless otherwise specified) Min. 20 0.5 Typ. 0.02 7.0 4 0.7 2 6 8 10 3 230 55 40 1.1 Max. 1.2 100 1 10 75 125 7 370 1.7 pF ns nC Unit V V/ V S nA uA uA m Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA VDS=VGS, ID=250uA VDS=5V, ID=3A VGS= 12V Symbol BVDSS BVDSS / Tj Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) VGS(th) gfs IGSS IDSS VDS=20V, VGS=0 VDS=16V, VGS=0 VGS=4.5V, ID=3.5A VGS=2.5V, ID=1.2A ID=3A VDS=16V VGS=4.5V VDS=15V ID=1A VGS=5V RG=3.3 RD=15 VGS=0V VDS=20V f=1.0MHz f=1.0MHz Static Drain-Source On-Resistance Total Gate Charge2 Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Rg Source-Drain Diode Parameter Forward On Voltage 2 Symbol VSD Trr Qrr Min. - Typ. 16 8 Max. 1.2 - Unit V ns nC Test Conditions IS=1.2A, VGS=0V IS=3A, VGS=0V dI/dt=100A/ s Reverse Recovery Time Reverse Recovery Charge Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in copper pad of FR4 board, t copper pad. 2 10sec; 270 /W when mounted on Min. 2/4 ISSUED DATE :2005/05/16 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 ISSUED DATE :2005/05/16 REVISED DATE : Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 4/4 .


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