GaAs Bi-directional Infrared Light Emitting Diode
Infrared Light Emitting Diodes
LNA2701L
GaAs Bi-directional Infrared Light Emitting Diode
8˚
8˚
Unit : mm
For light s...
Description
Infrared Light Emitting Diodes
LNA2701L
GaAs Bi-directional Infrared Light Emitting Diode
8˚
8˚
Unit : mm
For light source of VCR (VHS System)
0.5 max.
Features
Two-way directivity High-power output, high-efficiency : PO = 1.8 mW (min.) Small resin package Long lifetime, high reliability Thin type package modified from LN59
2.8±0.2 2-C0.5
8˚
26
.5
˚
3.8±0.2 2.4±0.2 0.8
ø1.4±0.2
8˚
8˚
1.0
26 .5˚
16.9±1.0 Not soldered 2.0 0.8
2.8±0.2 1.3±0.2
8˚
2-R0.7
8˚
0.15 2-0.7 max. 2-0.5±0.1
(1.5)
Applications
Light source for tape end sensor of VCR and video camera recorder of VHS system Light source for 2-bit photo sensor
0.5±0.1
2 1 2.0 1: Anode 2: Cathode
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature
*
Symbol PD IF IFP* VR Topr Tstg
Ratings 75 50 1 3 –25 to +65 – 30 to +85
Unit mW mA A V ˚C ˚C
f = 100 Hz, Duty cycle = 0.1 %
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Radiant intensity at center Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins
*
Symbol I e* λP ∆λ VF IR Ct
Conditions IF = 50mA IF = 20mA IF = 20mA IF = 50mA VR = 3V VR = 0V, f = 1MHz
min 1.2
typ 940 50 1.3 35
max
Unit mW/sr nm nm
1.5 10
V µA pF
Radiant intensity Ie shows each value of intensity I1 and I2 in two directions.
I1 I2
1
Infrared Light Emitting Diodes
LNA2701L
∆IF — T...
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