LNA2701L

Infrared Light Emitting Diodes LNA2701L GaAs Bi-directional Infrared Light Emitting Diode 8˚ 8˚ Unit : mm For light source of VCR (VHS System) 0.5 max. Features Two-way directivity High-power output, high-efficiency : PO = 1.8 mW (min.) Small resin package Long lifetime, high reliability Thin type package modified from LN59 2.8±0.2 2-C0.5 8˚ 26 .5 ˚ 3.8±0.2 2.4±0.2 0.8 ø1.4±0.2 8˚ 8˚ 1.0 26 .5˚ 16.9±1.0 Not soldered 2.0 0.8 2.8±0.2 1.3±0.2 8˚ 2-R0.7 8˚ 0.15 2-0.7 max. 2-0.5±0.1 (1.5) Applications Light source for tape end sensor of VCR and video camera recorder of VHS system Light source for 2-bit photo sensor 0.5±0.1 2 1 2.0 1: Anode 2: Cathode Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP* VR Topr Tstg Ratings 75 50 1 3 –25 to +65 – 30 to +85 Unit mW mA A V ˚C ˚C f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter Radiant intensity at center Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins * Symbol I e* λP ∆λ VF IR Ct Conditions IF = 50mA IF = 20mA IF = 20mA IF = 50mA VR = 3V VR = 0V, f = 1MHz min 1.2 typ 940 50 1.3 35 max Unit mW/sr nm nm 1.5 10 V µA pF Radiant intensity Ie shows each value of intensity I1 and I2 in two directions. I1 I2 1 Infrared Light Emitting Diodes LNA2701L ∆IF — T...