G8051S

www.DataSheet4U.com ISSUED DATE :2003/11/11 REVISED DATE :2004/11/29B G8051S Description Features N P N E P I TA X I A L T R A N S I S T O R LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR The G8051S is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier for portable radio and general purpose applications. *Collector current up to 700mA *Collector –Emitter voltage up to 20V *Complementary to G8551S Package Dimensions D E S1 TO-92 A b1 S E A T IN G PLANE REF. L e1 e b C A S1 b b1 C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 Absolute Maximum Ratings (Ta = 25 Parameter ,unless otherwise specified) Ratings Unit Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collect Current(DC) Junction Temperature Storage Temperature Range Total Power Dissipation VCBO VCEO VEBO IC Tj TsTG PD Typ. 100 10 ,unless otherwise specified) Max. Unit V V V 1 uA 100 nA 400 0.5 1 V V MHz pF 25 20 5 0.7 +150 -55 ~ +150 625 Test Conditions IC=10uA,IE=0 IC=1mA,IB=0 IE=10uA,IC=0 VCB=20V, IE=0 VBE=6V,Ic=0 VCE=1V,IC=150mA VCE=1V,IC=150mA lC=500mA,IB=50mA VCE=1V,Ic=150mA VCE=10V,Ic=20mA, ,f=100MHz VCB=10V, IE=0A,f=1MHz V V V A mW Electrical Characteristics(Ta = 25 Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(on) fT Cob Rank Range Min. 25 20 5 100 150 - Classification Of hFE1 C 100-180...