LNA2801L

Infrared Light Emitting Diodes LNA2801L GaAlAs on GaAs Infrared Light Emitting Diode Unit : mm Not soldered 2.0 max. 2-0.8 max. 2-0.5±0.1 0.5±0.1 2 (1.5) 1 2.54 1.6 For optical control systems 5.5±0.2 1.0 15.5±1.0 1.0 4.5±0.3 ø3.6±0.2 ø3.0±0.2 Features High-power output, high-efficiency : Ie = 6 mW/sr (min.) Emitted light spectrum suited for silicon photodetectors Good radiant power output linearity with respect to input current ø3 plastic package Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP* VR Topr Tstg Ratings 75 50 1 3 –25 to +85 – 40 to +100 Unit mW mA A V ˚C ˚C 1: Anode 2: Cathode f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter Center radiant intensity Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins Half-power angle Symbol Ie λP ∆λ VF IR Ct θ Conditions IF = 20mA IF = 50mA IF = 50mA IF = 50mA VR = 3V VR = 0V, f = 1MHz The angle in which radiant intencity is 50% min 6 typ 940 50 1.3 35 15 max Unit mW/sr nm nm 1.5 10 V µA pF deg. 1 LNA2801L Infrared Light Emitting Diodes IF — Ta 60 10 2 IFP — Duty cycle tw = 10µs Ta = 25˚C 80 70 IF — VF Ta = 25˚C IF (mA) IFP (A) 50 10 IF (mA) Forward current 1 10 10 2 60 50 40 30 20 10 Allowable forward current 40 Pulse forward current 30 1 20 10 –1...