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GB840

GTM

SCHOTTKY BARRIER DIODE

www.DataSheet4U.com ISSUED DATE :2005/05/26 REVISED DATE : GB840 Description Features SCHOTTKY BARRIER DIODE V O L T A...


GTM

GB840

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Description
www.DataSheet4U.com ISSUED DATE :2005/05/26 REVISED DATE : GB840 Description Features SCHOTTKY BARRIER DIODE V O L T A G E 4 0 V, C U R R E N T 8 A R E C T I F I E R The GB840 is designed for switching power supplies, converters, free wheeling and reverse battery protection applications. *Low forward voltage drop *High frequency operation Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.20 2.80 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings at Ta=25 Parameters DC Reverse Voltage Working Peak Reverse Voltage Average Forward Current Surge Forward Current Junction Temperature Storage Temperature Thermal Resistance, Junction to case Symbol VR(RMS) VRWM IF IFSM Tj Tstg R JC Ratings 40 40 8 380 -55 ~ +150 -55 ~ +175 5 Unit V V A A Condition 50% duty cycle @TC=119 , rectangular waveform 10ms Sine or 6ms Rect. pulse /W Electrical Characteristics Parameters Reverse Voltage Forward Voltage* Reverse Current* Junction Capacitance Series Inductance Note *: Pulse Width <300 s, Duty Cycle <2%. Symbol VR VF IR CT LS Ratings Unit Condition min typ max 40 V IR=3mA, Tj=25 0.53 V IF=8A, Tj=25 2.0 mA VR=40V, Tj=25 VR=5V,Tj=25 900 pF (test signal range 100KHz~1MHz) 10.0 nH Measure lead to lead 5mm form body GB840 Page: 1/2 ISSUED DATE :2005/05/26 REVISED DATE : Characteristics Curve T Fig. 2 - Typical Values of...




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