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GBAS70C Dataheets PDF



Part Number GBAS70C
Manufacturers GTM
Logo GTM
Description SURFACE MOUNT SCHOTTKY BARRIER DIODE
Datasheet GBAS70C DatasheetGBAS70C Datasheet (PDF)

www.DataSheet4U.com CORPORATION G B AS70/ A/C/S Description ISSUED DATE :2003/04/10 REVISED DATE :2005/12/28B S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O LT A G E 7 0 V, C U R R E N T 7 0 m A These Schottky barrier diodes are designed for high speed switching applications, circuit protection and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is l.

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www.DataSheet4U.com CORPORATION G B AS70/ A/C/S Description ISSUED DATE :2003/04/10 REVISED DATE :2005/12/28B S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O LT A G E 7 0 V, C U R R E N T 7 0 m A These Schottky barrier diodes are designed for high speed switching applications, circuit protection and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Package Dimensions REF. A B C D E F Min. 2.70 2.40 1.40 0.35 0 0.45 Millimeter Max. 3.10 2.80 1.60 0.50 0.10 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10° Absolute Maximum Ratings at TA = 25 Parameter Operating Junction Temperature Storage Temperature Maximum Repetitive Peak Reverse Voltage Maximum Average Forward Rectified Current Non- Repetitive Peak Forward Surge Current @ tp Thermal Resistance Junction to Ambient Air Total Power Dissipation 1.0s Symbol Tj Tstg VRRM Io IFSM R JA Ratings +125 -65 ~ +125 70 70 100 445 225 Unit V mA mA /W mW PD Electrical Characteristics (at TA = 25 Parameter Reverse Breakdown Voltage Forward Voltage Symbol V(BR)R VF unless otherwise noted) Min. 70 Typ. Max. 410 750 1000 100 10 2.0 5.0 nA uA pF ns mV Unit V IR=10 A IF1=1mA IF1=10mA IF2=15mA VR1=50V VR2=70V VR=0V, f=1MHz IF=IR=10mA, RL =100 , Irr=1mA Test Conditions Reverse Leakage Current Total Capacitance Reverse Recover Time IR CT Trr GBAS70/A/C/S Page: 1/2 CORPORATION Characteristics Curve ISSUED DATE :2003/04/10 REVISED DATE :2005/12/28B Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GBAS70/A/C/S Page: 2/2 .


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