GBAT34

www.DataSheet4U.com G B AT 3 4 Description Schottky Diode . 1/2 Package Dimensions Style : Pin 1.Anode 2.Cathode 3.Common Connection REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 10 0 Absolute Maximum Ratings Parameter Peak forward current Recurrent Peak Reverse Voltage RMS Voltage DC Blocking Voltage Average Forward Rectified Current Peak Forward Surge Current at 1 Sec Symbol VRRM VRMS VDC Io IFSM CJ TRR TJ Tstg PD Ratings 200 30 21 30 100 600 10 5.0 +150 -55 ~ +150 150 Unit mA V V V mA mA pF nSec Typical Junction Capacitance between Terminal(note 1) Reverse Recovery Time(Note 2) Operating Temperature Range Storage Temperature Total Power Dissipation at Ta = 25 mW Characteristics at Ta = 25 Symbol VF IR Min Max. 1000 2.0 Unit mV uA IF=100mA VR=25V Test Conditions characteristics Maximum Instantaneous Forward Voltage Maximum Average Reverse Current Note: 1.Measured at 1.0 MHz and applied reverse voltage of 1.0 volts. 2.Measured at applied forward current of 10 mA and reverse current of 10 mA. 3.ESD sensitive product handling required. Characteristics Curve 2/2 Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in...