www.DataSheet4U.com
ISSUED DATE :2005/03/25 REVISED DATE :2005/10/21B
GBC556
Description Features
PNP SILICON TRANSIST...
www.DataSheet4U.com
ISSUED DATE :2005/03/25 REVISED DATE :2005/10/21B
GBC556
Description Features
PNP SILICON
TRANSISTOR
The GBC556 is designed for drive and output-stages of audio amplifiers. High DC Current Gain: 120~800 @VCE=-5V, IC=-2mA Complementary to GBC546
D
Package Dimensions
E S1
TO-92
A
S E A T IN G PLANE
b1
L
REF. A S1 b b1 C
e1
e
b
C
Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51
REF. D E L e1 e
Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66
Absolute Maximum Ratings (TA=25 )
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (continuous) Total Device Dissipation @ TA =25 Derate above 25 Total Device Dissipation @ TC =25 Derate above 25
Operating and Storage Junction Temperature
Symbol VCBO VCEO VEBO IC PD PD TJ, Tstg R JA R JC
Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case
Ratings -80 -65 -5 -100 625 5.0 1.5 12 -55 ~ +150 200 83.3
Unit V V V mA mW mW/ W mW/ /W /W
Electrical Characteristics (TA = 25
Symbol BVCBO BVCEO BVEBO ICES *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *VBE(on)1 *VBE(on)2 *hFE fT Cob Min. -80 -65 -5 -0.55 120 Typ. -0.075 -0.25 -0.7 -1.0 -0.62 -0.7 280 3.0
unless otherwise noted)
Max. -100 -0.3 -0.65 -0.7 -0.82 800 6.0 Unit V V V nA V V V V V V MHz pF Test Conditions IC=-100uA, IE=0 IC=-2mA, IB=0 IE=-100uA, IC=0 VCE=-40V, VBE=0 IC=-10mA, IB=-0.5mA IC=-100mA, IB=-5mA IC=-10mA, IB=-0.5mA IC=-100mA, IB...