GC01L60

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/09/14 REVISED DATE : GC01L60 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 600V 12 160mA The GC01L06 utilized advanced processing techniques to achieve the possible on-resistance, extremely efficient and cost-effectiveness device. *Simple Drive Requirement *Low Gate Charge *Fast Switching Characteristics Description Features Package Dimensions D E S1 TO-92 A S E A T IN G PLANE b1 REF. L e1 e b C A S1 b b1 C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TA=25 ID @TA=100 IDM PD @TC=25 2 Ratings 600 30 160 100 300 0.83 0.5 1 -55 ~ +150 Unit V V mA mA mA W mJ A Total Power Dissipation Single Pulse Avalanche Energy Avalanche Current Operating Junction and Storage Temperature Range EAS IAR Tj, Tstg Thermal Data Parameter Thermal Resistance Junction-ambient Max. Symbol Rthj-a Value 150 Unit /W GC01L60 Page: 1/4 ISSUED DATE :2005/09/14 REVISED DATE : Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Unless otherwise specified) Min. 600 2.0 Typ. 0.8 0.8 5 1.5 0.7 8 5 13 9 260 20 3 3 Max. 4.0 100 10 100 12 8 420 pF ns nC Unit V V/ ...