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GC2301 Dataheets PDF



Part Number GC2301
Manufacturers GTM
Logo GTM
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet GC2301 DatasheetGC2301 Datasheet (PDF)

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/05/24 REVISED DATE : GC2301 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -20V 130m -2.6A The GC2301 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The GC2301 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Description Features *Simple Drive Requirement *Fa.

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www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/05/24 REVISED DATE : GC2301 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -20V 130m -2.6A The GC2301 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The GC2301 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Description Features *Simple Drive Requirement *Fast Switching Package Dimensions D E S1 TO-92 A b1 S E A T IN G PLANE L REF. A S1 b b1 C e1 e b C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current1,2 Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a Ratings -20 ±12 -2.6 -2.1 -10 1.38 0.01 -55 ~ +150 Value 90 Unit V V A A A W W/ Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. Unit /W GC2301 Page: 1/4 ISSUED DATE :2005/05/24 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient unless otherwise specified) Min. -20 -0.5 Typ. -0.1 4.4 5.2 1.36 0.6 5.2 9.7 19 29 295 170 65 Max. ±100 -1 -10 130 190 10 pF ns nC Unit V V/ V S nA uA uA m Test Conditions VGS=0, ID=-250uA Reference to 25 , ID=-1mA VDS=VGS, ID=-250uA VDS=-5V, ID=-2.8A VGS= ±12V VDS=-20V, VGS=0 VDS=-16V, VGS=0 VGS=-5.0V, ID=-2.8A VGS=-2.8V, ID=-2.0A ID=-2.8A VDS=-6V VGS=-5V VDS=-15V ID=-1A VGS=-10V RG=6 RD=15 VGS=0V VDS=-6V f=1.0MHz Symbol BVDSS BVDSS / Tj Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) VGS(th) gfs IGSS IDSS Static Drain-Source On-Resistance2 Total Gate Charge2 Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Source-Drain Diode Parameter Forward On Voltage 2 Symbol VSD IS ISM 1 Min. - Typ. - Max. -1.2 -1 -10 Unit V A A Test Conditions IS=-1.6A, VGS=0V, Tj=25 VD=VG=0V, VS=-1.2V Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. GC2301 Page: 2/4 ISSUED DATE :2005/05/24 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode GC2301 Fig 6. Gate Threshold.


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