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LNA4401L Dataheets PDF



Part Number LNA4401L
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description GaAlAs Infrared Light Emitting Diode
Datasheet LNA4401L DatasheetLNA4401L Datasheet (PDF)

Infrared Light Emitting Diodes LNA4401L GaAlAs Infrared Light Emitting Diode ø4.6±0.15 Unit : mm Glass lens For optical control systems Features High-power output, high-efficiency : PO = 10 mW (typ.) Fast response and high-speed modulation capability : fC = 20 MHz (typ.) TO-18 standard type package 12.7 min. 6.3±0.3 2-ø0.45±0.05 2.54±0.25 0 0± 1. .2 .1 5 3˚ 45± Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) O.

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Infrared Light Emitting Diodes LNA4401L GaAlAs Infrared Light Emitting Diode ø4.6±0.15 Unit : mm Glass lens For optical control systems Features High-power output, high-efficiency : PO = 10 mW (typ.) Fast response and high-speed modulation capability : fC = 20 MHz (typ.) TO-18 standard type package 12.7 min. 6.3±0.3 2-ø0.45±0.05 2.54±0.25 0 0± 1. .2 .1 5 3˚ 45± Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * 1. 2 1 Symbol PD IF IFP * Ratings 190 100 1 3 –25 to +85 –30 to +100 Unit mW mA A V ˚C ˚C 0± 0 ø5.75 max. 1: Anode 2: Cathode VR Topr Tstg f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins Half-power angle Cutoff frequency * Symbol PO λP ∆λ VF IR Ct θ fC* Conditions IF = 50mA IF = 50mA IF = 50mA IF = 100mA VR = 3V VR = 0V, f = 1MHz The angle in which radiant intencity is 50% min 6 typ 10 860 40 1.6 max Unit mW nm nm 1.9 10 V µA pF deg. MHz 6 20 IFP = 50mA + 10mAp-p Frequency when modulation optical power decreases by 3dB from 1MHz. ( PO(fCMHz) 10 log =–3 P O (1MHz) ) 1 Infrared Light Emitting Diodes LNA4401L IF — Ta 120 10 2 IFP — Duty cycle tw = 10µs Ta = 25˚C 10 4 IFP — VF tw = 10µs f = 100Hz Ta = 25˚C IF (mA) Pulse forward current IFP (mA) 1 10 10 2 IFP (A) 100 10 3 10 Allowable forward current 80 Pulse forward current 10 2 60 1 10 40 10 –1 20 1 0 – 25 0 20 40 60 80 100 10 –2 10 –1 10 –1 0 1 2 3 4 5 Ambient temperature Ta (˚C ) Duty cycle (%) Forward voltage VF (V) ∆PO — IFP 10 2 (1) tw = 10µs f = 100Hz (2) DC Ta = 25˚C 2.2 VF — Ta 10 ∆PO — Ta IF = 50mA ∆PO VF (V) 10 1.8 IF = 100mA 50mA Relative radiant power Forward current (2) 1 1.4 Relative radiant power 120 ∆PO 1 0 40 80 10 –1 – 40 (1) 10 –1 1.0 10 –2 1 10 10 2 10 3 0.6 – 40 0 40 80 Pulse forward current IFP (mA) Ambient temperature Ta (˚C ) Ambient temperature Ta (˚C ) λP — Ta 920 IF = 50mA 100 Spectral characteristics IF = 50mA Ta = 25˚C Directivity characteristics 0˚ 100 10˚ 20˚ λP (nm) Relative radiant intensity (%) 900 80 80 70 Relative radiant intensity (%) 90 30˚ Peak emission wavelength 880 60 60 50 40 40˚ 50˚ 60˚ 70˚ 80˚ 90˚ 860 40 30 20 840 20 820 – 40 0 40 80 120 0 750 800 850 900 950 1000 1050 Ambient temperature Ta (˚C ) Wavelength λ (nm) 2 .


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