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GC2307 Dataheets PDF



Part Number GC2307
Manufacturers GTM
Logo GTM
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet GC2307 DatasheetGC2307 Datasheet (PDF)

www.DataSheet4U.com Pb Free Plating Product CORPORATION GC2307 P-CHANNEL ENHANCEMENT MODE POWER MOSFET ISSUED DATE :2005/06/20 REVISED DATE : BVDSS RDS(ON) ID -16V 60m -4.0A The GC2307 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The GC2307 is universally preferred for all commercial-industrial applications and suited for low voltage applications such as DC/DC converters. Description Features *Simple Drive Requirement *Fast.

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www.DataSheet4U.com Pb Free Plating Product CORPORATION GC2307 P-CHANNEL ENHANCEMENT MODE POWER MOSFET ISSUED DATE :2005/06/20 REVISED DATE : BVDSS RDS(ON) ID -16V 60m -4.0A The GC2307 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The GC2307 is universally preferred for all commercial-industrial applications and suited for low voltage applications such as DC/DC converters. Description Features *Simple Drive Requirement *Fast Switching Package Dimensions D E S1 TO-92 A S E A T IN G PLANE b1 L REF. A S1 b b1 C e1 e b C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 3 Continuous Drain Current 1 Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a Ratings -16 ±8 -4.0 -3.3 -12 1.38 0.01 -55 ~ +150 Ratings 90 Unit V V A A A W W/ Thermal Data Parameter 3 Thermal Resistance Junction-ambient Max. Unit /W 1/4 CORPORATION Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ISSUED DATE :2005/06/20 REVISED DATE : unless otherwise specified) Min. -16 Typ. -0.01 12 15 1.3 4 8 11 54 36 985 180 160 Max. -1.0 ±100 -1 -25 60 70 90 24 1580 pF ns nC m Unit V V/ V S nA uA uA Test Conditions VGS=0, ID=-250uA Reference to 25 , ID=-1mA VDS=VGS, ID=-250uA VDS=-5V, ID=-4A VGS= ±8V VDS=-16V, VGS=0 VDS=-12V, VGS=0 VGS=-4.5V, ID=-4A VGS=-2.5V, ID=-3.0A VGS=-1.8V, ID=-2.0A ID=-4A VDS=-12V VGS=-4.5V VDS=-10V ID=-1A VGS=-10V RG=3.3 RD=10 VGS=0V VDS=-15V f=1.0MHz Symbol BVDSS BVDSS / Tj Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) VGS(th) gfs IGSS IDSS Static Drain-Source On-Resistance2 RDS(ON) - Total Gate Charge 2 Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss - Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Parameter Forward On Voltage 2 2 Symbol VSD Trr Qrr Min. - Typ. 39 26 Max. -1.2 - Unit V ns nC Test Conditions IS=-1.2A, VGS=0V IS=-4A, VGS=0V dI/dt=100A/ s Reverse Recovery Time Reverse Recovery Charge Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 2/4 CORPORATION Characteristics Curve ISSUED DATE :2005/06/20 REVISED DATE : Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode Fig 6. Gate Threshol.


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