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Pb Free Plating Product
CORPORATION
GC2307
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
ISSUED DATE :2005/06/20 REVISED DATE :
BVDSS RDS(ON) ID
-16V 60m -4.0A
The GC2307 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The GC2307 is universally preferred for all commercial-industrial applications and suited for low voltage applications such as DC/DC converters.
Description
Features
*Simple Drive Requirement *Fast Switching
Package Dimensions
D E S1
TO-92
A
S E A T IN G PLANE
b1
L
REF. A S1 b b1 C
e1
e
b
C
Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51
REF. D E L e1 e
Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 3 Continuous Drain Current 1 Pulsed Drain Current Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a
Ratings -16 ±8 -4.0 -3.3 -12 1.38 0.01 -55 ~ +150 Ratings 90
Unit V V A A A W W/
Thermal Data
Parameter 3 Thermal Resistance Junction-ambient Max. Unit /W
1/4
CORPORATION
Electrical Characteristics (Tj = 25
Parameter Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
ISSUED DATE :2005/06/20 REVISED DATE :
unless otherwise specified)
Min. -16 Typ. -0.01 12 15 1.3 4 8 11 54 36 985 180 160 Max. -1.0 ±100 -1 -25 60 70 90 24 1580 pF ns nC m Unit V V/ V S nA uA uA Test Conditions VGS=0, ID=-250uA Reference to 25 , ID=-1mA VDS=VGS, ID=-250uA VDS=-5V, ID=-4A VGS= ±8V VDS=-16V, VGS=0 VDS=-12V, VGS=0 VGS=-4.5V, ID=-4A VGS=-2.5V, ID=-3.0A VGS=-1.8V, ID=-2.0A ID=-4A VDS=-12V VGS=-4.5V VDS=-10V ID=-1A VGS=-10V RG=3.3 RD=10 VGS=0V VDS=-15V f=1.0MHz
Symbol BVDSS
BVDSS / Tj
Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 )
VGS(th) gfs IGSS IDSS
Static Drain-Source On-Resistance2
RDS(ON)
-
Total Gate Charge
2
Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss
-
Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2
Source-Drain Diode
Parameter Forward On Voltage
2 2
Symbol VSD Trr Qrr
Min. -
Typ. 39 26
Max. -1.2 -
Unit V ns nC
Test Conditions IS=-1.2A, VGS=0V IS=-4A, VGS=0V dI/dt=100A/ s
Reverse Recovery Time
Reverse Recovery Charge
Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%.
2/4
CORPORATION
Characteristics Curve
ISSUED DATE :2005/06/20 REVISED DATE :
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
Fig 5. Forward Characteristics of Reverse Diode
Fig 6. Gate Threshol.