GD1SS356

www.DataSheet4U.com ISSUED DATE :2006/01/23 REVISED DATE : GD1SS356 Description S U R F A C E M O U N T, B A N D S W I T C H I N G D I O D E V O LT A G E 3 5 V, C U R R E N T 0 . 1 A The GD1SS356 is designed for high frequency switching application. Features High reliability Small mode type Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.85 1.05 0 0.10 0.80 1.00 1.15 1.45 1.60 1.80 2.30 2.70 REF. L b c Q1 Millimeter Min. Max. 0.20 0.25 0.10 0.40 0.40 0.18 0.15 BSC. Absolute Maximum Ratings at Ta = 25 Parameter Reverse Voltage(DC) Forward Current(DC) Junction Temperature Storage Temperature Total Power Dissipation Symbol VR IF Tj Tstg PD Ratings 35 100 +125 -55 ~ +150 225 mW Unit V mA Electrical Characteristics at Ta = 25 Parameter Reverse Breakdown Reverse Current(DC) Reverse Voltage(DC) Diode Capacitance Forward dynamic resistance Symbol VR IR VF CD Min. 35 Typ. 0.9 0.65 Max. 10 1 1.2 0.9 Unit V nA V pF IR=10uA VR=25V IF=10mA VR=6, f=1MHz IF=2mA, f=100MHz Test Conditions rf Note 1: Rated input/output frequency: 100MHz GD1SS356 Page: 1/2 ISSUED DATE :2006/01/23 REVISED DATE : Characteristics Curve IF - VF CD - VR IR - T a r f - IF rf - f Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or sy...