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GD401SD

GTM

SURFACE MOUNT SCHOTTKY BARRIER DIODE

www.DataSheet4U.com CORPORATION GD401SD Description Package Dimensions ISSUED DATE :2005/12/20 REVISED DATE :2006/05/2...


GTM

GD401SD

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Description
www.DataSheet4U.com CORPORATION GD401SD Description Package Dimensions ISSUED DATE :2005/12/20 REVISED DATE :2006/05/24B S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O LT A G E 3 0 V, C U R R E N T 0 . 2 A The GD401SD is high frequency rectification for switching power supply. REF. A A1 A2 D E HE Millimeter Min. Max. 0.85 1.05 0 0.10 0.80 1.00 1.15 1.45 1.60 1.80 2.30 2.70 REF. L b c Q1 Millimeter Min. Max. 0.20 0.25 0.10 0.40 0.40 0.18 0.15 BSC. Absolute Maximum Ratings at TA = 25 Parameter Junction Temperature Storage Temperature Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Peak Forward Surge Current at 8.3mSec single half sine-wave Typical Junction Capacitance between Terminal (Note 1) Maximum Average Forward Rectified Current Total Power Dissipation Symbol Tj Tstg VRRM VRMS VDC IFSM CJ Io PD Ratings +125 -55 ~ +125 30 21 30 3.0 40 0.2 225 V V V A pF A mW Unit Electrical Characteristics (at TA = 25 Parameter Reverse Breakdown Voltage Maximum Instantaneous Forward Voltage Maximum Average Reverse Current Symbol V(BR)R VF IR unless otherwise noted) Min. 30 Typ. Max. 500 50 100 Unit V mV A A Test Conditions IR=100 A IF=200mA VR1=10V VR2=30V Notes: 1. Measured at 1.0 MHz and 0 reverse bias voltage. 2. ESD sensitive product handling required. GD401SD Page: 1/2 CORPORATION Characteristics Curve ISSUED DATE :2005/12/20 REVISED DATE :2006/05/24B Important Notice: All rights are reserved. Reproduction ...




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