LNA4602L

Infrared Light Emitting Diodes LNA4602L GaAlAs Infrared Light Emitting Diode Unit: mm For optical control systems R1.75±0.1 s Features Not soldered 4.2±0.3 2.3 1.9 2.4 φ3.5±0.2 4.8±0.3 High-power output, high-efficiency Light-emitting pattern of almost point source Ultra-miniature, thin side-view type package 4.5±0.3 2.54±0.25 2.4 1.2 2.8 1.8 2− 0.98±0.2 1.66±0.25 Parameter Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol IFP VR Topr Tstg Ratings 1.2 3 −20 to +60 −30 to +70 Unit A V °C °C 1 2.54 10 min. s Absolute Maximum Ratings Ta = 25°C 12.8 min. 2− 0.45±0.15 0.45±0.15 2 1: Cathode 2: Anode Note) *: f = 100 Hz, Duty Cycle = 0.1% s Electro-optical Characteristics Ta = 25°C Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Peak forward voltage Reverse current (DC) Half-power angle Note) 1. ∆PO≤35% at t = 10 000 shot Symbol PO λP ∆λ VF VFP IR θ IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA IFP = 1 A, tW = 0.14 ms VR = 3 V The angle in which radiant intencity is 50% 30 Conditions min 3 850 35 1.5 2.9 1.9 3.8 100 typ max Unit mW nm nm V V µA ° f = 500 Hz, Duty = 7% 32 ms 1 s (1 shot) 2. Frequency that the modulated total output power decreases by 3 dB from that of at 1 MHz. PO (fC MHz) Cut-off Frequcency: 200 MHz fC: 10 log = −3 PO (1 MHz) 1 ...