Document
www.DataSheet4U.com
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP36P06KDG
SWITCHING P-CHANNEL POWER MOSFET
DESCRIPTION
The NP36P06KDG is P-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER NP36P06KDG-E1-AY NP36P06KDG-E2-AY
Note Note
LEAD PLATING Pure Sn (Tin)
PACKING Tape 800 p/reel
PACKAGE TO-263 (MP-25ZK)
Note Pb-free (This product does not contain Pb in external electrode.)
FEATURES
• Super low on-state resistance RDS(on)1 = 29.5 mΩ MAX. (VGS = −10 V, ID = −18 A) RDS(on)2 = 37.5 mΩ MAX. (VGS = −4.5 V, ID = −18 A) • Low input capacitance Ciss = 3100 pF TYP. (TO-263)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
−60 m20 m36 m108 56 1.8 175 −55 to +175 23 54
V V A A W W °C °C A mJ
Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
IAS EAS
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = −30 V, RG = 25 Ω, VGS = −20 → 0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 2.68 83.3 °C/W °C/W
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D18687EJ3V0DS00 (3rd edition) Date Published May 2007 NS CP(K) Printed in Japan
2007
The mark shows major revised points. The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field.
NP36P06KDG
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Threshold Voltage Forward Transfer Admittance
Note Note
SYMBOL IDSS IGSS VGS(th) | yfs | RDS(on)1 RDS(on)2
TEST CONDITIONS VDS = −60 V, VGS = 0 V VGS = m20 V, VDS = 0 V VDS = −10 V, ID = −1 mA VDS = −10 V, ID = −18 A VGS = −10 V, ID = −18 A VGS = −4.5 V, ID = −18 A VDS = −10 V, VGS = 0 V, f = 1 MHz VDD = −30 V, ID = −18 A, VGS = −10 V, RG = 0 Ω
MIN.
TYP.
MAX. −10 m100
UNIT
μA
nA V S
−1.0 12
−1.6 23 23.1 27.0 3100 350 205 8 11 210 110
−2.5
Drain to Source On-state Resistance
29.5 37.5
mΩ mΩ pF pF pF ns ns ns ns nC nC nC
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Note
Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr
VDD = −48 V, VGS = −10 V, ID = −36 A IF = −36 A, VGS = 0 V IF = −36 A, VGS = 0 V, di/dt = −100 A/μs
54 7 15 0.98 43 56 1.5
V ns nC
Note Pulsed test PW ≤ 350 μs, Duty Cycle ≤ 2%
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 Ω PG. VGS = −20 → 0 V − ID VDD 50 Ω L VDD PG. BVDSS VDS VGS(−) 0 τ Starting Tch τ = 1 μs Duty Cycle ≤ 1% VDS
Wave Form
TEST CIRCUIT 2 SWITCHING TIME
D.U.T. RL RG VDD VDS(−)
90% 10% 10% 90%
VGS(−) VGS
Wave Form
0
10%
VGS
90%
IAS
VDS
0
td(on) ton
tr td(off) toff
tf
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = −2 mA PG. 50 Ω RL VDD
2
Data Sheet D18687EJ3V0DS
NP36P06KDG
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - %
120
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
80
PT - Total Power Dissipation - W
100 80 60 40 20 0 0 25 50 75 100 125 150 175 200
70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 200
Tch - Channel Temperature - °C FORWARD BIAS SAFE OPERATING AREA
TC - Case Temperature - °C
-1000 -100
ID - Drain Current - A
ID(pulse)
PW =1
i
00
-10 -1 -0.1
TC = 25°C Single Pulse RDS(on) Limited (VGS = −10 V)
ID(DC) DC
w Po D er ip iss io at d it e im nL
1i m
i
μs
s
1i 0 m
i
s
-0.01 -0.1
-1
-10
-100
VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(t) - Transient Thermal Resistance - °C/W
100
Rth(ch-A) = 83.3°C/Wi
10
1
Rth(ch-C) = 2.68°C/Wi
0.1 Single Pulse 0.01 100 μ
1m 10 m 100 m 1 10 100 1000
PW - Pulse Width - s
Data Sheet D18687EJ3V0DS
3
NP36P06KDG
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
-120 -100
ID - Drain Current - A
-1000
VGS = −10 V
ID - Drain Current - A
-100 -10 -1 -0.1 -0.01
Pulsed
VDS = −10 V Pulsed
-80 -60 -40 -20 0 0 -1 -2 -3 -4 -5 -6 -7
VDS - Drain to Source Voltage - V GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE
−4.5 V
Tch = −55°C −25°C 25°C 75°C 125°C 150°C 175°C 0 -1 -2 -3 -4 -5
-0.001
VGS - Gate to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward.