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NP36P06KDG Dataheets PDF



Part Number NP36P06KDG
Manufacturers NEC
Logo NEC
Description N-Channel Power MOSFET
Datasheet NP36P06KDG DatasheetNP36P06KDG Datasheet (PDF)

www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36P06KDG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP36P06KDG is P-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP36P06KDG-E1-AY NP36P06KDG-E2-AY Note Note LEAD PLATING Pure Sn (Tin) PACKING Tape 800 p/reel PACKAGE TO-263 (MP-25ZK) Note Pb-free (This product does not contain Pb in external electrode.) FEATURES • Super low on-state resistance .

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www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36P06KDG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP36P06KDG is P-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP36P06KDG-E1-AY NP36P06KDG-E2-AY Note Note LEAD PLATING Pure Sn (Tin) PACKING Tape 800 p/reel PACKAGE TO-263 (MP-25ZK) Note Pb-free (This product does not contain Pb in external electrode.) FEATURES • Super low on-state resistance RDS(on)1 = 29.5 mΩ MAX. (VGS = −10 V, ID = −18 A) RDS(on)2 = 37.5 mΩ MAX. (VGS = −4.5 V, ID = −18 A) • Low input capacitance Ciss = 3100 pF TYP. (TO-263) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg −60 m20 m36 m108 56 1.8 175 −55 to +175 23 54 V V A A W W °C °C A mJ Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = −30 V, RG = 25 Ω, VGS = −20 → 0 V THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 2.68 83.3 °C/W °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D18687EJ3V0DS00 (3rd edition) Date Published May 2007 NS CP(K) Printed in Japan 2007 The mark shows major revised points. The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field. NP36P06KDG ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Threshold Voltage Forward Transfer Admittance Note Note SYMBOL IDSS IGSS VGS(th) | yfs | RDS(on)1 RDS(on)2 TEST CONDITIONS VDS = −60 V, VGS = 0 V VGS = m20 V, VDS = 0 V VDS = −10 V, ID = −1 mA VDS = −10 V, ID = −18 A VGS = −10 V, ID = −18 A VGS = −4.5 V, ID = −18 A VDS = −10 V, VGS = 0 V, f = 1 MHz VDD = −30 V, ID = −18 A, VGS = −10 V, RG = 0 Ω MIN. TYP. MAX. −10 m100 UNIT μA nA V S −1.0 12 −1.6 23 23.1 27.0 3100 350 205 8 11 210 110 −2.5 Drain to Source On-state Resistance 29.5 37.5 mΩ mΩ pF pF pF ns ns ns ns nC nC nC Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Note Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = −48 V, VGS = −10 V, ID = −36 A IF = −36 A, VGS = 0 V IF = −36 A, VGS = 0 V, di/dt = −100 A/μs 54 7 15 0.98 43 56 1.5 V ns nC Note Pulsed test PW ≤ 350 μs, Duty Cycle ≤ 2% TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = −20 → 0 V − ID VDD 50 Ω L VDD PG. BVDSS VDS VGS(−) 0 τ Starting Tch τ = 1 μs Duty Cycle ≤ 1% VDS Wave Form TEST CIRCUIT 2 SWITCHING TIME D.U.T. RL RG VDD VDS(−) 90% 10% 10% 90% VGS(−) VGS Wave Form 0 10% VGS 90% IAS VDS 0 td(on) ton tr td(off) toff tf TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = −2 mA PG. 50 Ω RL VDD 2 Data Sheet D18687EJ3V0DS NP36P06KDG TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - % 120 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 80 PT - Total Power Dissipation - W 100 80 60 40 20 0 0 25 50 75 100 125 150 175 200 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 200 Tch - Channel Temperature - °C FORWARD BIAS SAFE OPERATING AREA TC - Case Temperature - °C -1000 -100 ID - Drain Current - A ID(pulse) PW =1 i 00 -10 -1 -0.1 TC = 25°C Single Pulse RDS(on) Limited (VGS = −10 V) ID(DC) DC w Po D er ip iss io at d it e im nL 1i m i μs s 1i 0 m i s -0.01 -0.1 -1 -10 -100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - °C/W 100 Rth(ch-A) = 83.3°C/Wi 10 1 Rth(ch-C) = 2.68°C/Wi 0.1 Single Pulse 0.01 100 μ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D18687EJ3V0DS 3 NP36P06KDG DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS -120 -100 ID - Drain Current - A -1000 VGS = −10 V ID - Drain Current - A -100 -10 -1 -0.1 -0.01 Pulsed VDS = −10 V Pulsed -80 -60 -40 -20 0 0 -1 -2 -3 -4 -5 -6 -7 VDS - Drain to Source Voltage - V GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE −4.5 V Tch = −55°C −25°C 25°C 75°C 125°C 150°C 175°C 0 -1 -2 -3 -4 -5 -0.001 VGS - Gate to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward.


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