POWER MOSFET. OM11N60SA Datasheet

OM11N60SA Datasheet PDF, Equivalent


Part Number

OM11N60SA

Description

(OM11N55SA / OM11N60SA) POWER MOSFET

Manufacture

ETC

Total Page 4 Pages
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OM11N60SA Datasheet
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POWER MOSFET IN HERMETIC ISOLATED
TO-254AA PACKAGE
OM11N60SA
OM11N55SA
600V & 550V, 11 Amp, N-Channel
MOSFET In Hermetic Metal Package
FEATURES
• Isolated Hermetic Metal Package
• Fast Switching
• Low RDS(on)
• Available Screened To MIL-S-19500, TX, TXV And S
• Ceramic Feedthroughs Also Available
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. The device breakdown ratings provide a substantial
voltage margin for stringent applications such as 270 VDC aircraft power and/or
rectified 230 VAC power (line operation). They are ideally suited for Military
requirements where small size, high performance and high reliability are required,
and in applications such as switching power supplies, motor controls, inverters,
choppers, audio amplifiers and high energy pulse circuits.
MAXIMUM RATINGS
PART NUMBER
OM11N60
OM11N55
VDS
600V
550V
RDS(on)
.50
.44
ID(MAX)
11A
11A
SCHEMATIC
DRAIN
3.1
GATE
4 11 R1
Supersedes 2 04 R0
SOURCE
3.1 - 19

OM11N60SA Datasheet
ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted
STATIC P/N OM11N60SA
Parameter
Min. Typ. Max. Units Test Conditions
BVDSS Drain-Source Breakdown
Voltage
VGS(th)
IGSS
IDSS
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
ID(on)
VDS(on)
On-State Drain Current1
Static Drain-Source On-State
Voltage1
600
2.0
11.0
V
4.0 V
± 100 nA
0.1 0.25 mA
0.2 1.0 mA
A
3.1 V
VGS = 0,
ID = 250 mA
VDS = VGS, ID = 250 mA
VGS = ± 20 V
VDS = Max. Rat., VGS = 0
VDS = 0.8 Max. Rat., VGS = 0,
TC = 125° C
VDS > ID(on) x RDS(on), VGS = 10 V
VGS = 10 V, ID = 5.5 A
RDS(on) Static Drain-Source On-State
Resistance1
.47 .50
VGS = 10 V, ID = 5.5 A
RDS(on) Static Drain-Source On-State
Resistance1
1.0 VGS = 10 V, ID = 5.5 A,
TC = 125 C
ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted
STATIC P/N OM11N55SA
Parameter
Min. Typ. Max. Units Test Conditions
BVDSS Drain-Source Breakdown
Voltage
VGS(th)
IGSSF
IDSS
Gate-Threshold Voltage
Gate-Body Leakage Forward
Zero Gate Voltage Drain
Current
ID(on)
VDS(on)
On-State Drain Current1
Static Drain-Source On-State
Voltage1
550 V
2.0 4.0 V
±100 nA
0.1 0.25 mA
0.2 1.0 mA
11.0 A
3.3 V
VGS = 0,
ID = 250 mA
VDS = VGS, ID = 250 mA
VGS = ± 20 V
VDS = Max. Rat., VGS = 0
VDS = 0.8 Max. Rat., VGS = 0,
TC = 125° C
VDS > ID(on) x RDS(on), VGS = 10 V
VGS = 10 V, ID = 5.5 A
RDS(on) Static Drain-Source On-State
Resistance1
.37 .44
VGS = 10 V, ID = 5.5 A
RDS(on) Static Drain-Source On-State
Resistance1
.88 VGS = 10 V, ID = 5.5 A,
TC = 125 C
DYNAMIC
gfs
Ciss
Coss
Crss
Td(on)
tr
Td(off)
tf
Forward Transductance1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
5.0
3000
440
220
55
75
225
135
S(W )
pF
pF
pF
VDS 2 VDS(on), ID = 5.5 A
VGS = 0
VDS = 25 V
f = 1 MHz
ns VDD = 210 V, ID @ 7.0 A
ns Rg = 5 W , RL = 30 W
ns (MOSFET) switching times are
essentially independent of
ns operating temperature.
DYNAMIC
gfs
Ciss
Coss
Crss
Td(on)
tr
Td(off)
tf
Forward Transductance1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
5.0
3000
440
220
55
75
225
135
S(W )
pF
pF
pF
VDS 2 VDS(on), ID = 5.5 A
VGS = 0
VDS = 25 V
f = 1 MHz
ns VDD = 210 V, ID @ 7.0 A
ns Rg = 5 W , RL = 30 W
ns (MOSFET) switching times are
essentially independent of
ns operating temperature.
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
IS Continuous Source Current
(Body Diode)
ISM Source Current1
(Body Diode)
VSD Diode Forward Voltage1
trr Reverse Recovery Time
- 11 A Modified MOSPOWER
D
IS Continuous Source Current
symbol showing
(Body Diode)
- 52 A the integral P-N G
ISM Source Current1
Junction rectifier.
S
(Body Diode)
- 1.4 V TC = 25 C, IS = -11 A, VGS = 0 VSD Diode Forward Voltage1
700 ns TJ = 150 C,IF = IS,
trr Reverse Recovery Time
dlF/ds = 100 A/ms
- 11 A Modified MOSPOWER
D
symbol showing
- 52 A the integral P-N G
Junction rectifier.
S
- 1.4 V TC = 25 C, IS = -11 A, VGS = 0
700 ns TJ = 150 C,IF = IS,
dlF/ds = 100 A/ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.


Features Datasheet pdf www.DataSheet4U.com OM11N60SA OM11N55SA POWER MOSFET IN HERMETIC ISOLATED TO- 254AA PACKAGE 600V & 550V, 11 Amp, N-Ch annel MOSFET In Hermetic Metal Package FEATURES • • • • • Isolated Hermetic Metal Package Fast Switching L ow RDS(on) Available Screened To MIL-S- 19500, TX, TXV And S Ceramic Feedthroug hs Also Available DESCRIPTION This ser ies of hermetically packaged products f eature the latest advanced MOSFET and p ackaging technology. The device breakdo wn ratings provide a substantial voltag e margin for stringent applications suc h as 270 VDC aircraft power and/or rect ified 230 VAC power (line operation). T hey are ideally suited for Military req uirements where small size, high perfor mance and high reliability are required , and in applications such as switching power supplies, motor controls, invert ers, choppers, audio amplifiers and hig h energy pulse circuits. MAXIMUM RATIN GS PART NUMBER OM11N60 OM11N55 VDS 600V 550V RDS(on) .50 .44 ID(MAX) 11A 11A 3.1 SCHEMATIC DRAIN GATE SOURCE.
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