SD210DE

www.DataSheet4U.com SD210DE/214DE Linear Integrated Systems N-CHANNEL LATERAL DMOS SWITCH Product Summary Features Ultra-High Speed Switching—tON: 1 ns Ultra-Low Reverse Capacitance: 0.2 pF Low Guaranteed rDS @5 V Low Turn-On Threshold Voltage N-Channel Enhancement Mode Benefits High-Speed System Performance Low Insertion Loss at High Frequencies Low Transfer Signal Loss Simple Driver Requirement Single Supply Operation Applications Fast Analog Switch Fast Sample-and-Holds Pixel-Rate Switching DAC Deglitchers High-Speed Driver Description The SD210DE/214DE are enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency applications. The SD214DE is normally used for ±10-V analog switching. These MOSFETs utilize lateral construction to achieve low capacitance and ultra-fast switching speeds. These MOSFETs do not have a gate protection Zener diode which results in lower gate leakage and ± voltage capability from gate to substrate. A poly-silicon gate is featured for manufacturing reliability. For similar products see: quad array—SD5000/5400 series, and Zener protected—SD211DE/SST211 series. Absolute Maximum Ratings (TA = 250C Unless Otherwise Noted) Gate-Drain, Gate-Source Voltage ......................................................... ± 40 V Gate-Substrate Voltage ......................................................................... ± 30 V Drain-Source Voltage (SD210DE) .......................