SURFACE MOUNT SCHOTTKY BARRIER DIODE
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CORPORATION
G DB AS40
V O LT A G E 4 0 V, C U R R E N T 0 . 2 A
ISSUED DATE :2005/12/20 REVISED DA...
Description
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CORPORATION
G DB AS40
V O LT A G E 4 0 V, C U R R E N T 0 . 2 A
ISSUED DATE :2005/12/20 REVISED DATE :
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E
The GDBAS40 is designed for high speed switching applications, circuit protection and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited.
Description
Package Dimensions
REF. A A1 A2 D E HE
Millimeter Min. Max. 0.85 1.05 0 0.10 0.80 1.00 1.15 1.45 1.60 1.80 2.30 2.70
REF. L b c Q1
Millimeter Min. Max. 0.20 0.25 0.10 0.40 0.40 0.18
0.15 BSC.
Absolute Maximum Ratings at TA = 25
Parameter Operating Junction Temperature Storage Temperature Maximum Repetitive Peak Reverse Voltage Thermal Resistance Junction to Ambient Air Peak Forward Surge Current at tp < 1.0s Maximum Average Forward Rectified Current Total Power Dissipation Symbol Tj Tstg VRRM R
JA
Ratings -55 ~ +125 -55 ~ +150 40 445 0.6 0.2 225
Unit
V /W A A mW
IFSM Io PD
Electrical Characteristics (at TA = 25
Parameter Reverse Breakdown Voltage Forward Voltage(tp < 300uS) Reverse Leakage Current Total Capacitance Reverse Recover Time Symbol V(BR)R VF IR CT Trr
unless otherwise noted)
Min. 40 Typ. Max. 380 1000 200 5.0 5.0 Unit V mV nA pF ns IR=10 A IF1=1mA IF2=40mA VR=30V VR=0V, f=1MHz IF=IR=10mA, RL=100 , Irr=1mA Test Conditions
GDBAS40
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CORPORATION
Characteristics Curve
ISSUED DATE ...
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