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ISSUED DATE :2005/01/05 REVISED DATE :
G D B AT 5 4
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O LT A G E 3 0 V, C U R R E N T 2 0 0 m A
Description
Package Dimensions
The GDBAT54 is designed for high speed switching applications circuit protection, and voltage clamping.
REF. A A1 A2 D E HE
Millimeter Min. Max. 0.85 1.05 0 0.10 0.80 1.00 1.15 1.45 1.60 1.80 2.30 2.70
REF. L b c Q1
Millimeter Min. Max. 0.20 0.25 0.10 0.40 0.40 0.18
0.15 BSC.
Absolute Maximum Ratings at Ta = 25
Parameter Junction Temperature Storage Temperature Peak Repetitive Reverse Voltage Forward Continuous Current Peak Repetitive Forward Current Surge Forward Current(t 1.0s) Total Power Dissipation at Ta = 25 Symbol Tj Tstg VR IF IFRM IFSM PD Ratings -55 ~ +125 -55 ~ +150 30 200 300 600 225 V mA mA mA mW Unit
Characteristics at Ta = 25
characteristics Reverse Breakdown Voltage Symbol V(BR)R VF(1) VF(2) Forward Voltage VF(3) VF(4) VF(5) Reverse Leakage Current Total Capacitance Reverse Recover Time IR CT Trr Min 30 Max. 240 320 400 500 1000 2.0 10 5 Unit V mV mV mV mV mV A pF ns IR=10 A IF=0.1mA IF=1mA IF=10mA IF=30mA IF=100mA VR=25V VR=1V, f=1MHz IF=IR=10mA, IR(Rec)=1mA Test Conditions
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ISSUED DATE :2005/01/05 REVISED DATE :
Characteristics Curve
Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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