GE08P20

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/01/19 REVISED DATE : GE08P20 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -200V 680m -8A Description The GE08P20 (TO-220 package through-hole version) is available for low-profile applications and suited for low voltage applications such as DC/DC converters. *Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic *RoHS Compliant Features Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Tj, Tstg Ratings -200 ±20 -8 -5 -30 96 0.77 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-c Rthj-a Value 1.3 62 Unit /W /W GE08P20 Page: 1/4 www.DataSheet4U.com ISSUED DATE :2006/01/19 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient unless otherwise specified) Min. -200 -2.0 Typ. -0.03 4 20 5 13...