TRANSISTOR. GM5401 Datasheet

GM5401 Datasheet PDF


Part

GM5401

Description

PNP EPITAXIAL PLANAR TRANSISTOR

Manufacture

GTM

Page 2 Pages
Datasheet
Download GM5401 Datasheet


GM5401 Datasheet
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GM5401
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The GM5401 is designer for general purpose applications requiring high breakdown voltages.
Package Dimensions
SOT-89
GM
1/2
Absolute Maximum Ratings at Ta = 25
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
Collector Current
Total Power Dissipation
IC
PD
Characteristics at
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
hFE1
hFE2
hFE3
fT
Cob
Min.
-160
-150
-5
-
-
-
-
-
-
50
60
50
100
-
Ta = 25
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-50
-50
-200
-500
-1
-1
-
240
-
-
6
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0 10
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13 TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Ratings
+150
-55 ~ +150
-160
-150
-5
-600
1
Unit
V
V
V
mA
W
Unit
V
V
V
nA
nA
mV
mV
V
V
MHz
pF
Test Conditions
IC=-100uA, IE =0
IC=-1mA, IB=0
IE=-10uA, IC=0
VCB=-120V , IE=0
VEB=-5V , IC=0
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
VCE=-5V, IC=-1mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-50mA
VCE=-10V, IC=-10mA, f=100MHz
VCB=-10V, f=1MHz

GM5401 Datasheet
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Characteristics Curve
2/2
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 FAX : 86-21-38950165


Features Datasheet pdf www.DataSheet4U.com GM5401 Description Package Dimensions 1/2 PNP EPITAXIAL P LANAR TRANSISTOR The GM5401 is designe r for general purpose applications requ iring high breakdown voltages. SOT-89 GM REF. A C D E I H Millimeter Min. M ax. 6.70 7.30 2.90 3.10 0.02 0.10 10 0 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF . 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3. 70 1.40 1.80 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperatu re Storage Temperature Collector to Bas e Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Curre nt Total Power Dissipation Symbol Tj Ts tg VCBO VCEO VEBO IC PD Ratings +150 -5 5 ~ +150 -160 -150 -5 -600 1 V V V mA W Unit Characteristics Symbol BVCBO BVC EO BVEBO ICBO IEBO VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 hFE1 hFE2 hFE3 fT C ob at Ta = 25 Min. -160 -150 -5 50 60 50 100 Typ. Max. -50 -50 -200 -500 -1 - 1 240 6 MHz pF Unit V V V nA nA mV mV V V IC=-100uA, IE =0 IC=-1mA, IB=0 IE=-10uA, IC=0 VCB=-120V , IE.
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