TRANSISTOR. GM5551 Datasheet

GM5551 Datasheet PDF


Part

GM5551

Description

NPN EPITAXIAL PLANAR TRANSISTOR

Manufacture

GTM

Page 2 Pages
Datasheet
Download GM5551 Datasheet


GM5551 Datasheet
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GM5551
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GM5551 is designed for for general purpose applications requiring high breakdown voltages.
Package Dimensions
1/2
Absolute Maximum Ratings
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
VCBO
VCES
VEBO
IC
PD
Characteristics at
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
hFE1
hFE2
hFE3
fT
Cob
Min.
180
160
6
-
-
-
-
-
-
80
80
30
100
-
Ta = 25
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
50
50
150
200
1
1
-
250
-
300
6
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.4 4.6
4.05 4.25
1.50 1.70
1.30 1.50
2.40 2.60
0.89 1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min. Max.
3.00 REF.
1.50 REF.
0.40 0.52
1.40 1.60
0.35 0.41
5 TYP.
0.70 REF.
Ratings
+150
-55 ~ +150
180
160
6.0
600
1.2
Unit
V
V
V
mA
W
Unit
V
V
V
nA
nA
mV
mV
V
V
MHz
pF
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VCB=120V
VEB=4V
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IE=50mA
VCE=10V, IC=10mA, f=100MHz
VCB=10V, f=1MHz

GM5551 Datasheet
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Characteristics Curve
2/2
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 FAX : 86-21-38950165


Features Datasheet pdf www.DataSheet4U.com GM5551 Description 1/2 NPN EPITAXIAL PLANAR TRANSISTOR T he GM5551 is designed for for general p urpose applications requiring high brea kdown voltages. Package Dimensions RE F. A B C D E F Millimeter Min. Max. 4. 4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.4 0 2.60 0.89 1.20 REF. G H I J K L M M illimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 TYP. 0 .70 REF. Absolute Maximum Ratings Para meter Junction Temperature Storage Temp erature Collector to Base Voltage Colle ctor to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCES VE BO IC PD Ratings +150 -55 ~ +150 180 16 0 6.0 600 1.2 V V V mA W Unit Characte ristics Symbol BVCBO BVCEO BVEBO ICBO I EBO VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(s at)2 hFE1 hFE2 hFE3 fT Cob at Ta = 25 Min. 180 160 6 80 80 30 100 Typ. Max. 5 0 50 150 200 1 1 250 300 6 MHz pF Unit V V V nA nA mV mV V V IC=100uA IC=1mA I E=10uA VCB=120V VEB=4V IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA,.
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