PNP EPITAXIAL PLANAR TRANSISTOR
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ISSUED DATE :2005/08/10 REVISED DATE :
GE1046
Description Features
P NP E PITAX IAL PL ANAR T RANS...
Description
www.DataSheet4U.com
ISSUED DATE :2005/08/10 REVISED DATE :
GE1046
Description Features
P NP E PITAX IAL PL ANAR T RANS ISTO R
The GE1046 is designed for general purpose application. Low Collector Saturation Voltage : VCE (sat) =-1.0V (Max.) @ IC=-2A, IB=-0.2A,
Package Dimensions
REF. A b c D E L4 L5
Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60
REF. c1 b1 L e L1 Ø A1
Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80
Absolute Maximum Ratings (TA=25 )
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Base Current Total Device Dissipation Junction Temperature Storage Temperature TA=25 TC=25 Symbol VCBO VCEO VEBO IC IB PD PD TJ Tstg Ratings -60 -60 -7 -3 -0.5 2 20 150 -55 ~ +150 Unit V V V A A W W
Electrical Characteristics (TA = 25
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(on) *hFE1 *hFE2 fT Cob ton (Turn-on Time) tstg (Storage Time) tf (Fall Time) Min. -60 -60 -7 100 20 Typ. 30 45 0.4 1.7 0.5
unless otherwise noted)
Max. -100 -100 -1.0 -1.0 320 *Pulse Test: Pulse Width 380 s, Duty Cycle 2%
Unit V V V uA uA V V IC=-100uA, IE=0 IC=-50mA, IB=0 IE=-100uA, IC=0 VCB=-60V, IE=0 VEB=-7V, IC=0 IC=-2A, IB=-0.2A
Test Conditions
VCE=-5V, IC=-0.5A VCE=-5V, IC=-0.5A VCE=-5V, IC=-3A
MHz pF uS
VCE=-5V, IC=-0.5A VCB=-10V, IE=0, f=1MHz See specified test circuit
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ISSUED DATE :2005/08/10 REVISED DATE :
Classification Of hFE1...
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