GE13007

www.DataSheet4U.com ISSUED DATE :2005/01/12 REVISED DATE : GE13007 NPN SILICON TRIPLE DIFFUSED MESA TYPE TRANSISTOR Description The GE13007 is designed for electronic transformers and power switching circuit applications. Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation at Tc=25 Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55 ~ +150 700 400 9 8 80 V V V A W Unit Electrical Characteristics(Tc = 25 Parameter Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector-Emitter Cutoff Current Emitter-Base Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Frequency characteristics Turn-On Time Storage Time Fall Time Unless otherwise specified) Min. 400 700 9 8 5 4 - Symbol VCEO(sus) BVCBO BVEBO ICBO ICEO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat) *HFE1 *HFE2 fT ton tstg tf Typ. - Max. 100 50 10 1.2 3.0 1.2 50 1.6 3 0.7 Unit V V V A A A V V V Test Conditions IC=10mA , IB=0 IC=1mA , IE=0 IE=1mA , IC=0 VCB=700V VCE=400V VEB=7V IC=2A, IB=400mA IC=8A...