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GE2026

GTM

NPN EPITAXIAL PLANAR TRANSISTOR

www.DataSheet4U.com ISSUED DATE :2005/09/05 REVISED DATE : GE2026 Description Features NP N E PITAX IAL PL ANAR T RANS...


GTM

GE2026

File Download Download GE2026 Datasheet


Description
www.DataSheet4U.com ISSUED DATE :2005/09/05 REVISED DATE : GE2026 Description Features NP N E PITAX IAL PL ANAR T RANS ISTO R The GE2026 is designed for general purpose application. Low Collector Saturation Voltage : VCE (sat) =1.0V (Max.) @ IC=2A, IB=0.2A, Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 Absolute Maximum Ratings (TA=25 ) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Base Current Total Device Dissipation Junction Temperature Storage Temperature TA=25 TC=25 Symbol VCBO VCEO VEBO IC IB PD PD TJ Tstg Ratings 60 60 7 3 0.5 2 20 150 -55 ~ +150 Unit V V V A A W W Electrical Characteristics (TA = 25 Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(on) *hFE1 *hFE2 fT Cob ton (Turn-on Time) tstg (Storage Time) tf (Fall Time) Min. 60 60 7 100 20 Typ. 30 35 0.65 1.3 0.65 unless otherwise noted) Max. 100 100 1.0 1.0 320 *Pulse Test: Pulse Width 380 s, Duty Cycle 2% Unit V V V uA uA V V IC=100uA, IE=0 IC=50mA, IB=0 IE=100uA, IC=0 VCB=60V, IE=0 VEB=7V, IC=0 IC=2A, IB=0.2A VCE=5V, IC=0.5A VCE=5V, IC=0.5A VCE=5V, IC=3A MHz pF uS VCE=5V, IC=0.5A Test Conditions VCB=10V, IE=0, f=1MHz See specified test circuit GE2026 Page: 1/3 ISSUED DATE :2005/09/05 REVISED DATE : Classification Of hFE1 Rank Range Y 100...




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