NPN EPITAXIAL PLANAR TRANSISTOR
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ISSUED DATE :2005/09/05 REVISED DATE :
GE2026
Description Features
NP N E PITAX IAL PL ANAR T RANS...
Description
www.DataSheet4U.com
ISSUED DATE :2005/09/05 REVISED DATE :
GE2026
Description Features
NP N E PITAX IAL PL ANAR T RANS ISTO R
The GE2026 is designed for general purpose application. Low Collector Saturation Voltage : VCE (sat) =1.0V (Max.) @ IC=2A, IB=0.2A,
Package Dimensions
REF. A b c D E L4 L5
Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60
REF. c1 b1 L e L1 Ø A1
Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80
Absolute Maximum Ratings (TA=25 )
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Base Current Total Device Dissipation Junction Temperature Storage Temperature TA=25 TC=25 Symbol VCBO VCEO VEBO IC IB PD PD TJ Tstg Ratings 60 60 7 3 0.5 2 20 150 -55 ~ +150 Unit V V V A A W W
Electrical Characteristics (TA = 25
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(on) *hFE1 *hFE2 fT Cob ton (Turn-on Time) tstg (Storage Time) tf (Fall Time) Min. 60 60 7 100 20 Typ. 30 35 0.65 1.3 0.65
unless otherwise noted)
Max. 100 100 1.0 1.0 320 *Pulse Test: Pulse Width 380 s, Duty Cycle 2%
Unit V V V uA uA V V IC=100uA, IE=0 IC=50mA, IB=0 IE=100uA, IC=0 VCB=60V, IE=0 VEB=7V, IC=0 IC=2A, IB=0.2A VCE=5V, IC=0.5A VCE=5V, IC=0.5A VCE=5V, IC=3A MHz pF uS VCE=5V, IC=0.5A
Test Conditions
VCB=10V, IE=0, f=1MHz See specified test circuit
GE2026
Page: 1/3
ISSUED DATE :2005/09/05 REVISED DATE :
Classification Of hFE1
Rank Range Y 100...
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