N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Pb Free Plating Product
ISSUED DATE :2005/03/01 REVISED DATE :2005/12/12B
GE60L02
N-CHANNEL ENHANC...
Description
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/03/01 REVISED DATE :2005/12/12B
GE60L02
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
25V 13m 50A
The GE60L02 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The through-hole version (TO-220) is available for low-profile applications and suited for low voltage applications such as DC/DC converters.
Description
Features
*Simple Drive Requirement *Low Gate Charge *Fast Switching
Package Dimensions
REF. A b c D E L4 L5
Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60
REF. c1 b1 L e L1 Ø A1
Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current
1
Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Tj, Tstg
Ratings 25 ±20 50 32 180 62.5 0.5 -55 ~ +150
Unit V V A A A W W/
Total Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Data
Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-case Rthj-amb Value 2.0 62 Unit /W /W
GE60L02
Page: 1/5
ISSUED DATE :2005/03/01 REVISED DATE :2005/12/12B
Electrical Characteristics (Tj = 25
Parameter Drain-Source Breakdown Voltage
Breakdo...
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