N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Pb Free Plating Product
ISSUED DATE :2005/06/24 REVISED DATE :
GE630
N-CHANNEL ENHANCEMENT MODE PO...
Description
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/06/24 REVISED DATE :
GE630
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
200V 400m 9A
The GE630 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 is universally preferred for all commercial-industrial applications at power dissipation level to approximately 50 watts. The through-hole version is available for low-profile applications. *Dynamic dv/dt Rating *Repetitive Avalanche Rated *Simple Drive Requirement *Fast Switching
Description
Features
Package Dimensions
REF. A b c D E L4 L5
Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60
REF. c1 b1 L e L1 Ø A1
Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current
1
Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25
2
Ratings 200 30 9 5.7 36 74 0.59 240 9 7 -55 ~ +150
Unit V V A A A W W/ mJ A mJ
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Operating Junction and Storage Temperature Range
EAS IAR EAR Tj, Tstg
Thermal Data
Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-c Rthj-a Val...
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