GE75NF60

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/12/01 REVISED DATE : GE75NF60 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 60V 12m 75A The GE75NF60 uses advanced trench technology to provide excellent on-resistance extremely efficient and cost-effectiveness device. The through-hole version (TO-220) is available for low-profile applications and suited for low voltage applications such as DC/DC converters. Description Features *High Density Cell Design for Ultra Low On-Resistance *High power and Current handing capability Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 2 Ratings 60 ±25 75 56 200 268 1.78 350 38 -55 ~ +175 Unit V V A A A W W/ mJ A Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy EAS IAS Tj, Tstg Single Pulse Avalanche Current Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-case Rthj-amb Value 0.56 60 Unit /W /W GE75NF60 Page: 1/4 ISSUED DATE :2006/12/01 REVISED DATE : Electrical Ch...