GESD880

www.DataSheet4U.com ISSUED DATE :2005/12/12 REVISED DATE : GESD880 Description Features NPN EPITAXIAL PLANAR TRANSISTOR The GESD880 is designed for audio frequency power amplifier application. High DC Current Gain: hFE = 300 (Max.) @ VCE = 5V, IC = 0.5A Low Saturation Voltage: VCE (sat) = 1.0V (Max.) @ IC = 3A, IB = 0.3A Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 Absolute Maximum Ratings (TA=25 ) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Power Dissipation (TA=25 ) Collector Power Dissipation (TC=25 ) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD PD TJ Tstg Ratings 80 62 7 3 1.5 25 150 -55 ~ +150 Unit V V V A W W Electrical Characteristics (TA = 25 Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *VBE(ON) *hFE fT Cob Min. 80 62 7 60 Typ. 8 40 unless otherwise noted) Max. 10 10 1.0 1.5 1.0 300 MHz pF Unit V V V uA uA V V V IC=100uA, IE=0 IC=50mA, IB=0 IE=100uA, IC=0 VCB=80V, IE=0 VEB=7V, IC=0 IC=3A, IB=0.3A IC=2A, IB=0.2A VCE=5V, IC=500mA VCE=5V, IC=0.5A VCE=5V, IE=-0.5A VCB=10V, IE=0, f=1MHz *Pulse Test: Pulse Width 380 s, Duty Cycle 2% Test Conditions Classification Of hFE Rank Range O 60 ~ 120 Y 100 ~ 200 GR 150 ~ 300 GESD880 Page: 1/2 ISSUED DATE :2005/12/...