N-CHANNEL ENHANCEMENT MODE POWER MOSFET
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/08/19 REVISED DATE :
GI01L60
Description Features
N-CHA...
Description
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/08/19 REVISED DATE :
GI01L60
Description Features
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
600V 12 1A
The GI01L60 (through-hole version) is available for low-profile applications and suited for AC/DC converters. *Repetitive Avalanche Rated *Simple Drive Requirement *Fast Switching Speed *RoHS Compliant
Package Dimensions TO-251
REF. A B C D E F
Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90
REF. G H J K L M
Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current
1
Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25
2
Ratings 600 30 1 0.8 3 29 0.232 0.5 1 0.5 -55 ~ +150
Unit V V A A A W W/ mJ A mJ
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Operating Junction and Storage Temperature Range
EAS IAR EAR Tj, Tstg
Thermal Data
Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-case Rthj-amb Value 4.3 110 Unit /W /W
GI01L60
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ISSUED DATE :2005/08/19 REVISED DATE :
Electrical Characteristics(Tj = 25
Parameter Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Unless otherwise specified)
Min. 600 2.0 Typ. 0.8 0....
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