GS123

www.DataSheet4U.com ISSUED DATE :2005/02/25 REVISED DATE : GS123 Description Package Dimensions NPN EPITAXIAL TRANSISTOR The GS123 is designed for general purpose amplifier applications. REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55 ~ +150 25 20 5 700 225 V V V mA mW Unit Characteristics Symbol BVCBO BVCEO BVEBO ICBO VCE(sat) VBE(on) hFE fT Cob at Ta = 25 Min. 25 20 5 150 150 Typ. Max. 1 400 1 300 10 MHz pF Unit V V V uA mV V IC=10uA , IE=0 IC=1mA, IB=0 IE=10uA, IC=0 VCB=20V, IE=0 IC=500mA, IB=50mA VCE=1V, IC=150mA VCE=1V, IC=150mA VCE=10V, IC=20mA, f=100MHz VCB=10V, f=1MHz Test Conditions 1/2 ISSUED DATE :2005/02/25 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents,...