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Pb Free Plating Product
ISSUED DATE :2005/03/10 REVISED DATE :2006/11/24C
GS1332E
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
20V 600m 600mA
The GS1332E provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. *Simple Gate Drive *Small Package Outline *2KV ESD Rating (Per MIL-STD-883D)
Description
Features
Package Dimensions
REF. A A1 A2 D E HE
Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40
REF. L1 L b c e Q1
Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC.
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Current Continuous Drain Current3 Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor
Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a
Operating Junction and Storage Temperature Range
Ratings 20 ±5 600 470 2.5 0.35 0.003 -55 ~ +150 Value 360
Unit V V mA mA A W W/
Thermal Data
Parameter Thermal Resistance Junction-ambient3 Max.
Unit /W
GS1332E
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ISSUED DATE :2005/03/10 REVISED DATE :2006/11/24C
Electrical Characteristics (Tj = 25
Parameter Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
unless otherwise specified)
Min. 20 0.5 Typ. 0.02 1 1.3 0.3 0.5 4 10 15 2 38 17 12 Max. 1.2 ±10 1 10 600 1200 2 60 pF ns nC Unit V V/ V S uA uA uA m Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA VDS=VGS, ID=250uA VDS=5V, ID=600mA VGS= ±5V VDS=20V, VGS=0 VDS=16V, VGS=0 VGS=4.5V, ID=600mA VGS=2.5V, ID=400mA ID=600mA VDS=16V VGS=4.5V VDS=10V ID=600mA VGS=10V RG=3.3 RD=16.7 VGS=0V VDS=10V f=1.0MHz
Symbol BVDSS
BVDSS / Tj
Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 )
VGS(th) gfs IGSS IDSS
Static Drain-Source On-Resistance Total Gate Charge2 Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss
Source-Drain Diode
Parameter Forward On Voltage
2
Symbol VSD
Min. -
Typ. -
Max. 1.2
Unit V
Test Conditions IS=300mA, VGS=0V
Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on FR4 board, t 10sec.
GS1332E
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ISSUED DATE :2005/03/10 REVISED DATE :2006/11/24C
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
Fig 5. Forward Characteristics of Reverse Diode
GS1332E
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
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ISSUED DATE :2005/03/10 REVISED DATE :2006/11/24C
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe .