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GS1332E Dataheets PDF



Part Number GS1332E
Manufacturers GTM
Logo GTM
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet GS1332E DatasheetGS1332E Datasheet (PDF)

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/03/10 REVISED DATE :2006/11/24C GS1332E N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 600m 600mA The GS1332E provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. *Simple Gate Drive *Small Package Outline *2KV ESD Rating (Per MIL-STD-883D) Description Features Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 .

  GS1332E   GS1332E



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www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/03/10 REVISED DATE :2006/11/24C GS1332E N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 600m 600mA The GS1332E provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. *Simple Gate Drive *Small Package Outline *2KV ESD Rating (Per MIL-STD-883D) Description Features Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Current Continuous Drain Current3 Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a Operating Junction and Storage Temperature Range Ratings 20 ±5 600 470 2.5 0.35 0.003 -55 ~ +150 Value 360 Unit V V mA mA A W W/ Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. Unit /W GS1332E Page: 1/4 ISSUED DATE :2005/03/10 REVISED DATE :2006/11/24C Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient unless otherwise specified) Min. 20 0.5 Typ. 0.02 1 1.3 0.3 0.5 4 10 15 2 38 17 12 Max. 1.2 ±10 1 10 600 1200 2 60 pF ns nC Unit V V/ V S uA uA uA m Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA VDS=VGS, ID=250uA VDS=5V, ID=600mA VGS= ±5V VDS=20V, VGS=0 VDS=16V, VGS=0 VGS=4.5V, ID=600mA VGS=2.5V, ID=400mA ID=600mA VDS=16V VGS=4.5V VDS=10V ID=600mA VGS=10V RG=3.3 RD=16.7 VGS=0V VDS=10V f=1.0MHz Symbol BVDSS BVDSS / Tj Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) VGS(th) gfs IGSS IDSS Static Drain-Source On-Resistance Total Gate Charge2 Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Source-Drain Diode Parameter Forward On Voltage 2 Symbol VSD Min. - Typ. - Max. 1.2 Unit V Test Conditions IS=300mA, VGS=0V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on FR4 board, t 10sec. GS1332E Page: 2/4 ISSUED DATE :2005/03/10 REVISED DATE :2006/11/24C Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode GS1332E Fig 6. Gate Threshold Voltage v.s. Junction Temperature Page: 3/4 ISSUED DATE :2005/03/10 REVISED DATE :2006/11/24C Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe .


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