GS1333

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/03/10 REVISED DATE : GS1333 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -20V 800m -550mA Description The GS1333 provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. *Simple Gate Drive *Small Package Outline *Fast Switching Speed Features Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 1,2 Pulsed Drain Current Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a Ratings -20 12 -550 -440 2.5 0.35 0.003 -55 ~ +150 Ratings 360 Unit V V mA mA A W W/ Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. Unit /W 1/4 ISSUED DATE :2005/03/10 REVISED DATE : Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Unless otherwise specified) Min. -20 -0.5 Typ. 0.01 1 1.7 0.3 0.4 5 8 10 2 66 25 20 Max. -1.2 100 -1 -10 600 800 1000 2.7 105.6 pF ns nC m Unit V V/ V S nA uA uA Test Conditions VGS=0, ID=-250uA Reference to 25 , ID=-1mA VDS=VGS, ID=-250uA VDS=-5V, ID=-550m...