GS138K

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/10/11 REVISED DATE : GS138K N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 50V 2 640mA The GS138K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The GS138K is universally used for all commercial-industrial applications. Description Features *Simple Drive Requirement *Small Package Outline *RoHS Compliant Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS@10V Continuous Drain Current3, VGS@10V 1,2 Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a Ratings 50 ±20 640 500 950 0.35 0.003 -55 ~ +150 Ratings 360 Unit V V mA mA mA W W/ Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. Unit /W GS138K Page: 1/4 ISSUED DATE :2005/10/11 REVISED DATE : Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Unless otherwise specified) Min. 50 0.5 Typ. 0.06 600 1 0.5 0.5 12 10 56 29 32 8 6 Max. 2.0 ±10 1 100 2 4 1.6 50 pF ns nC Unit V...