GS2N7002

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2004/09/15 REVISED DATE :2006/01/17B GS2N7002 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 60V 4.5 500mA Description The GS2N7002 is universally used for all commercial-industrial surface mount applications. Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.8 1.10 0 0.10 0.8 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Absolute Maximum Ratings at Ta = 25 Parameter Operating Junction and Storage Temperature Range Drain-Source Voltage Gate-Source Voltage Continuous Non-repetitive (tp Pulsed Drain Current Power Dissipation Thermal Resistance ,Junction-to-Ambient (2) Symbol Tj, Tstg Ratings -55 ~ +150 60 ±20 ±40 500 800 225 556 Unit V V V mA mA mW /W VDS VGS 50us) (1) VGSM ID IDM PD RthJA Continuous Drain Current Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Static Drain-Source on-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance (2)Pulse Width 300us, Duty cycle 2%. Symbol BVDSS VGS(th) IGSS IDSS ID(ON) RDS(ON) GFS Ciss Coss Crss unless otherwise specified) Min. 60 1 500 80 Typ. Max. 2.5 ±100 1 5 4.5 50 25 5 mS pF pF pF VDS=25V, VGS =0V, f=1MHz Unit V V nA uA mA Test Conditions VGS=0, ID=250uA VDS=2.5V,...