N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Pb Free Plating Product
ISSUED DATE :2005/09/19 REVISED DATE :
GS2N7002K
N-CHANNEL ENHANCEMENT MOD...
Description
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/09/19 REVISED DATE :
GS2N7002K
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
60V 2 640mA
The GS2N7002K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The GS2N7002K is universally used for all commercial-industrial applications.
Description
Features
*Simple Drive Requirement *Small Package Outline *RoHS Compliant
Package Dimensions
REF. A A1 A2 D E HE
Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40
REF. L1 L b c e Q1
Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC.
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS@10V Continuous Drain Current3, VGS@10V 1,2 Pulsed Drain Current Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a
Ratings 60 20 640 500 950 0.35 0.003 -55 ~ +150 Ratings 360
Unit V V mA mA mA W W/
Thermal Data
Parameter Thermal Resistance Junction-ambient3 Max. Unit /W
GS2N7002K
Page: 1/4
ISSUED DATE :2005/09/19 REVISED DATE :
Electrical Characteristics(Tj = 25
Parameter Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Unless otherwise specified)
Min. 60 1.0 Typ. 0.06 600 1 0.5 0.5 12 10 56 29 32 8 6 Max. 3.0 10 1 100 2 4 1.6 50 pF ns...
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