GS421SD

www.DataSheet4U.com CORPORATION GS421SD Description Package Dimensions ISSUED DATE :2005/12/20 REVISED DATE : S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O LT A G E 4 0 V, C U R R E N T 0 . 1 A The GS421SD is designed for low power rectification. REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Absolute Maximum Ratings at TA = 25 Parameter Junction Temperature Storage Temperature Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Peak Forward Surge Current at 8.3mSec single half sine-wave Typical Junction Capacitance between Terminal (Note 1) Maximum Average Forward Rectified Current Total Power Dissipation Symbol Tj Tstg VRRM VRMS VDC IFSM CJ Io PD Ratings +125 -40 ~ +125 40 28 40 1.0 6.0 0.1 225 V V V A pF A mW Unit Electrical Characteristics (at TA = 25 Parameter Reverse Breakdown Voltage Maximum Instantaneous Forward Voltage Maximum Average Reverse Current Symbol V(BR)R VF IR unless otherwise noted) Min. 40 Typ. Max. 340 550 30 Unit V mV uA Test Conditions IR=100 A IF1=10mA IF2=100mA VR=10V Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 10 volts. 2. ESD sensitive product handling required. GS421SD Page: 1/2 CORPORATION Characteristics Curve ISSUED DATE :2005/12/20 REVISED DATE : Important Notice: All rights are reserved. Reproduction in ...