256K x 16 4Mb Asynchronous SRAM
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GS74116TP/J/U SOJ, TSOP, FP-BGA Commercial Temp Industrial Temp Features
• Fast access time: 8, 10,...
Description
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GS74116TP/J/U SOJ, TSOP, FP-BGA Commercial Temp Industrial Temp Features
Fast access time: 8, 10, 12, 15ns CMOS low power operation: 170/145/130/110 mA at min.cycle time. Single 3.3V ± 0.3V power supply All inputs and outputs are TTL compatible Byte control Fully static operation Industrial Temperature Option: -40° to 85°C Package line up J: 400mil, 44 pin SOJ package TP: 400mil, 44 pin TSOP Type II package U: 7.20mm x 11.65mm Fine Pitch Ball Grid Array package
256K x 16 4Mb Asynchronous SRAM
SOJ 256K x 16 Pin Configuration
A4 A3 A2 A1 A0 CE DQ1 DQ2 DQ3 DQ4 VDD VSS DQ5 DQ6 DQ7 DQ8 WE A15 A14 A13 A12 A16 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
8, 10, 12, 15ns 3.3V VDD Center VDD & VSS
Top view
44 pin SOJ
Description
The GS74116 is a high speed CMOS static RAM organized as 262,144-words by 16-bits. Static design eliminates the need for external clocks or timing strobes. Operating on a single 3.3V power supply and all inputs and outputs are TTL compatible. The GS74116 is available in a 7.2x11.65 mm Fine Pitch BGA package, 400 mil SOJ and 400 mil TSOP Type-II packages.
44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23
A5 A6 A7 OE UB LB DQ16 DQ15 DQ14 DQ13 VSS VDD DQ12 DQ11 DQ10 DQ9 NC A8 A9 A10 A11 A17
Pin Descriptions Symbol
A0 to A17 DQ1 to DQ 16 CE LB UB WE OE VDD VSS NC
Description
Address input Data input/output Chip enable input Lower byte enable input (DQ1 to DQ8) Upper byte enable input (DQ9 to...
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