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GSA1015

GTM

PNP EPITAXIAL PLANAR TRANSISTOR

www.DataSheet4U.com CORPORATION G S A1015 Description Features P NP E PITAX I AL P L ANAR TANSI STOR The GSA1015 is des...


GTM

GSA1015

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Description
www.DataSheet4U.com CORPORATION G S A1015 Description Features P NP E PITAX I AL P L ANAR TANSI STOR The GSA1015 is designed for use in driver stage of AF amplifier and general purpose applications. ISSUED DATE :2004/07/09 REVISED DATE :2004/11/29B *Collector-Base Voltage: VCBO =-50V *Complementary to GSC1815 Package Dimensions D E S1 TO-92 A b1 S E A T IN G PLANE L REF. A S1 b b1 C e1 e b C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 Absolute Maximum Ratings at Ta = 25 Parameter Symbol Ratings Unit Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Base Current Total Power Dissipation Tj Tstg VCBO VCEO VEBO IC IB PD +150 -55 ~ +150 -50 -50 -5 -150 -50 400 Max. Unit Test Conditions V V V mA mA mW Characteristics Symbol at Ta = 25 Min. Typ. BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) hFE1 hFE2 fT Cob -50 -50 -5 70 25 80 - - -100 -100 -0.3 -1.1 700 7.0 V V V nA nA V V MHz pF IC=-100uA , IE = 0 IC=-1mA, IB = 0 IE=-10uA, IC = 0 VCE=-50V, IE = 0 VEB=-5V, IC = 0 IC=-100mA, IB=-10mA IC=-100mA, IB=-10mA VCE=-6V, IC=-2mA VCE=-6V, IC=-150mA VCE=-10V, IC=-1mA, f=100MHz VCB=-10V, IE = 0,f=1MHz * Pulse Test: Pulse Width 380us, Duty Cycle 2% Classification OF hFE1 Rank Range O 70-140 Y 120-240 GR 200-400 L 350-700 1/2 CORPORATION Characteristics Curve ISSUED DATE ...




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