PNP EPITAXIAL PLANAR TRANSISTOR
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CORPORATION
G S A1015
Description Features
P NP E PITAX I AL P L ANAR TANSI STOR
The GSA1015 is des...
Description
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CORPORATION
G S A1015
Description Features
P NP E PITAX I AL P L ANAR TANSI STOR
The GSA1015 is designed for use in driver stage of AF amplifier and general purpose applications.
ISSUED DATE :2004/07/09 REVISED DATE :2004/11/29B
*Collector-Base Voltage: VCBO =-50V *Complementary to GSC1815
Package Dimensions
D E S1
TO-92
A
b1 S E A T IN G PLANE
L
REF. A S1 b b1 C
e1
e
b
C
Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51
REF. D E L e1 e
Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66
Absolute Maximum Ratings at Ta = 25
Parameter Symbol Ratings Unit
Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Base Current Total Power Dissipation
Tj Tstg VCBO VCEO VEBO IC IB PD
+150 -55 ~ +150 -50 -50 -5 -150 -50 400
Max. Unit Test Conditions
V V V mA mA mW
Characteristics
Symbol
at Ta = 25
Min. Typ.
BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) hFE1 hFE2 fT Cob
-50 -50 -5 70 25 80 -
-
-100 -100 -0.3 -1.1 700 7.0
V V V nA nA V V
MHz pF
IC=-100uA , IE = 0 IC=-1mA, IB = 0 IE=-10uA, IC = 0 VCE=-50V, IE = 0 VEB=-5V, IC = 0 IC=-100mA, IB=-10mA IC=-100mA, IB=-10mA VCE=-6V, IC=-2mA VCE=-6V, IC=-150mA VCE=-10V, IC=-1mA, f=100MHz VCB=-10V, IE = 0,f=1MHz
* Pulse Test: Pulse Width 380us, Duty Cycle 2%
Classification OF hFE1
Rank Range O 70-140 Y 120-240 GR 200-400 L 350-700
1/2
CORPORATION
Characteristics Curve
ISSUED DATE ...
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